PBSS4240V,115
- Mfr.Part #
- PBSS4240V,115
- Manufacturer
- Nexperia
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS NPN 40V 2A SOT666
- Stock
- 15,618
- In Stock :
- 15,618
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1.2W
- Frequency :
- 150MHz
- Max Collector Current :
- 2A
- Max Breakdown Voltage :
- 40V
- Transistor Element Material :
- SILICON
- Pin Count :
- 6
- Published :
- 2009
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- PBSS4240
- Power Dissipation :
- 1.2W
- Gain Bandwidth Product :
- 150MHz
- Mounting Type :
- Surface Mount
- Number of Pins :
- 6
- Number of Elements :
- 1
- Terminal Form :
- Flat
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Number of Terminations :
- 6
- Radiation Hardening :
- No
- Transition Frequency :
- 150MHz
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 40V
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 40V
- Collector Emitter Breakdown Voltage :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Power - Max :
- 900mW
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 200mA, 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 500mA 5V
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Package / Case :
- SOT-563, SOT-666
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Datasheets
- PBSS4240V,115

NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
PBSS4240V,115 Overview
In this device, the DC current gain is 300 @ 500mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS4240V,115 Features
the DC current gain for this device is 300 @ 500mA 5V
the vce saturation(Max) is 400mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PBSS4240V,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4240V,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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