PBSS4240T,215
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- Mfr.Part #
- PBSS4240T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 2A TO236AB
- Stock
- 91,619
- In Stock ：
- 91,619
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2001
- Pin Count :
- 3
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 40V
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Frequency :
- 230MHz
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 230MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 40V
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 320mV
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Width :
- 1.4mm
- Height :
- 1mm
- Terminal Form :
- Gull wing
- Length :
- 3mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 480mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 480mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Transition Frequency :
- 230MHz
- Max Breakdown Voltage :
- 40V
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- Base Part Number :
- PBSS4240
- Collector Emitter Voltage (VCEO) :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Datasheets
- PBSS4240T,215
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS4240T,215 Overview
In this device, the DC current gain is 300 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 320mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 320mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 230MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS4240T,215 Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 230MHz
PBSS4240T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4240T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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