PBSS4230T,215
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- Mfr.Part #
- PBSS4230T,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA PBSS4230T - SMALL SIGNA
- Stock
- 4,837
- In Stock ：
- 4,837
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 300
- Max Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Transition Frequency :
- 230MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- Power Dissipation :
- 480mW
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Max Collector Current :
- 2A
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 30V
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 480mW
- Number of Terminations :
- 3
- Weight :
- 4.535924g
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Gain Bandwidth Product :
- 230MHz
- RoHS Status :
- ROHS3 Compliant
- Height :
- 6.35mm
- Frequency :
- 230MHz
- Length :
- 6.35mm
- Collector Base Voltage (VCBO) :
- 40V
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Width :
- 6.35mm
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Base Part Number :
- PBSS4230
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Datasheets
- PBSS4230T,215
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS4230T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 230MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS4230T,215 Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 230MHz
PBSS4230T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4230T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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