PBSS4230T,215
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- Mfr.Part #
- PBSS4230T,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA PBSS4230T - SMALL SIGNA
- Stock
- 4,837
- In Stock ：
- 4,837
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- hFE Min :
- 300
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Length :
- 6.35mm
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Gull wing
- Power Dissipation :
- 480mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Base Part Number :
- PBSS4230
- Width :
- 6.35mm
- Gain Bandwidth Product :
- 230MHz
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 6.35mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 2A
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 40V
- Transition Frequency :
- 230MHz
- Max Power Dissipation :
- 480mW
- Collector Emitter Voltage (VCEO) :
- 30V
- Weight :
- 4.535924g
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Collector Emitter Breakdown Voltage :
- 30V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Frequency :
- 230MHz
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Published :
- 2009
- Datasheets
- PBSS4230T,215
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS4230T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 230MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS4230T,215 Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 230MHz
PBSS4230T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4230T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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