PBSS4230T,215
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- Mfr.Part #
- PBSS4230T,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA PBSS4230T - SMALL SIGNA
- Stock
- 4,837
- In Stock ：
- 4,837
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage :
- 30V
- Gain Bandwidth Product :
- 230MHz
- Max Breakdown Voltage :
- 30V
- Factory Lead Time :
- 4 Weeks
- Weight :
- 4.535924g
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 480mW
- Collector Base Voltage (VCBO) :
- 40V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Power Dissipation :
- 480mW
- Base Part Number :
- PBSS4230
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 300
- Terminal Position :
- Dual
- Width :
- 6.35mm
- Frequency :
- 230MHz
- Max Collector Current :
- 2A
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 230MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Collector Emitter Voltage (VCEO) :
- 30V
- Published :
- 2009
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Length :
- 6.35mm
- Height :
- 6.35mm
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Datasheets
- PBSS4230T,215
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS4230T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 230MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS4230T,215 Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 230MHz
PBSS4230T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4230T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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