PBSS4230T,215
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- Mfr.Part #
- PBSS4230T,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA PBSS4230T - SMALL SIGNA
- Stock
- 4,837
- In Stock ：
- 4,837
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2009
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- PBSS4230
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 230MHz
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 4 Weeks
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 30V
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 40V
- Height :
- 6.35mm
- Frequency :
- 230MHz
- Max Breakdown Voltage :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Max Power Dissipation :
- 480mW
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 30V
- Width :
- 6.35mm
- Weight :
- 4.535924g
- Max Collector Current :
- 2A
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Length :
- 6.35mm
- hFE Min :
- 300
- Number of Terminations :
- 3
- Transition Frequency :
- 230MHz
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- JESD-609 Code :
- e3
- Power Dissipation :
- 480mW
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Datasheets
- PBSS4230T,215
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS4230T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 230MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS4230T,215 Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 230MHz
PBSS4230T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4230T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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