PBSS4230T,215

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Mfr.Part #
PBSS4230T,215
Manufacturer
NXP Semiconductors
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
NEXPERIA PBSS4230T - SMALL SIGNA
Stock
4,837
In Stock :
4,837

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
320mV @ 200mA, 2A
Collector Emitter Breakdown Voltage :
30V
Gain Bandwidth Product :
230MHz
Max Breakdown Voltage :
30V
Factory Lead Time :
4 Weeks
Weight :
4.535924g
Peak Reflow Temperature (Cel) :
260
Mounting Type :
Surface Mount
Terminal Finish :
Tin (Sn)
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Max Power Dissipation :
480mW
Collector Base Voltage (VCBO) :
40V
Package / Case :
TO-236-3, SC-59, SOT-23-3
Current - Collector Cutoff (Max) :
100nA ICBO
Lead Free :
Lead Free
Number of Elements :
1
Mount :
Surface Mount
Power Dissipation :
480mW
Base Part Number :
PBSS4230
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Terminal Form :
Gull wing
Time@Peak Reflow Temperature-Max (s) :
40
Radiation Hardening :
No
Emitter Base Voltage (VEBO) :
5V
hFE Min :
300
Terminal Position :
Dual
Width :
6.35mm
Frequency :
230MHz
Max Collector Current :
2A
RoHS Status :
ROHS3 Compliant
Transition Frequency :
230MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 1A 2V
Collector Emitter Voltage (VCEO) :
30V
Published :
2009
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
Pin Count :
3
Length :
6.35mm
Height :
6.35mm
Number of Pins :
3
Polarity/Channel Type :
NPN
Element Configuration :
Single
Number of Terminations :
3
Transistor Type :
NPN
Operating Temperature :
150°C TJ
Datasheets
PBSS4230T,215
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS4230T,215 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Base Part Number:PBSS4230, Number of Pins:3, Number of Terminations:3, Operating Temperature:150°C TJ, PBSS4230T,215 pinout, PBSS4230T,215 datasheet PDF, PBSS4230T,215 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS4230T,215 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PBSS4230T,215


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

PBSS4230T,215 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 230MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 2A volts.

PBSS4230T,215 Features


the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 230MHz


PBSS4230T,215 Applications


There are a lot of Nexperia USA Inc.
PBSS4230T,215 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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