PBSS4230PANP,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Operating Temperature :

150°C TJ

Polarity :

NPN, PNP

Power - Max :

510mW

Radiation Hardening :

No

Transistor Type :

NPN, PNP

Package / Case :

6-UDFN Exposed Pad

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.45W

Collector Emitter Voltage (VCEO) :

30V

Number of Elements :

2

Emitter Base Voltage (VEBO) :

7V

Number of Pins :

6

Vce Saturation (Max) @ Ib, Ic :

290mV @ 200mA, 2A

Terminal Finish :

Tin (Sn)

Frequency - Transition :

120MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A 2V

Transistor Element Material :

SILICON

Gain Bandwidth Product :

95MHz

JESD-609 Code :

e3

Pin Count :

6

Collector Emitter Saturation Voltage :

-75mV

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA ICBO

Packaging :

Cut Tape (CT)

Published :

2012

Factory Lead Time :

8 Weeks

Surface Mount :

yes

Current - Collector (Ic) (Max) :

2A

Element Configuration :

Dual

Case Connection :

COLLECTOR

Number of Terminations :

6

Max Collector Current :

3A

Transistor Application :

SWITCHING

Collector Base Voltage (VCBO) :

30V

Mounting Type :

Surface Mount

Transition Frequency :

120MHz