PBSS4230PANP,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

290mV @ 200mA, 2A

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A 2V

JESD-609 Code :

e3

Max Collector Current :

3A

Radiation Hardening :

No

Case Connection :

COLLECTOR

Number of Pins :

6

Collector Emitter Voltage (VCEO) :

30V

Power - Max :

510mW

Gain Bandwidth Product :

95MHz

Packaging :

Cut Tape (CT)

Factory Lead Time :

8 Weeks

Current - Collector (Ic) (Max) :

2A

Collector Base Voltage (VCBO) :

30V

Published :

2012

Transistor Application :

SWITCHING

Pin Count :

6

Number of Elements :

2

Max Power Dissipation :

1.45W

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

7V

Frequency - Transition :

120MHz

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN, PNP

Collector Emitter Saturation Voltage :

-75mV

Surface Mount :

yes

Number of Terminations :

6

Current - Collector Cutoff (Max) :

100nA ICBO

Polarity :

NPN, PNP

Operating Temperature :

150°C TJ

Element Configuration :

Dual

Terminal Finish :

Tin (Sn)

Transition Frequency :

120MHz

Package / Case :

6-UDFN Exposed Pad