PBSS4230PANP,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays

Published :

2012

Frequency - Transition :

120MHz

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

30V

Emitter Base Voltage (VEBO) :

7V

Current - Collector Cutoff (Max) :

100nA ICBO

Gain Bandwidth Product :

95MHz

Collector Base Voltage (VCBO) :

30V

Max Collector Current :

3A

Transistor Type :

NPN, PNP

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Polarity :

NPN, PNP

Transistor Element Material :

SILICON

Number of Terminations :

6

Case Connection :

COLLECTOR

Number of Pins :

6

Transition Frequency :

120MHz

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

-75mV

Vce Saturation (Max) @ Ib, Ic :

290mV @ 200mA, 2A

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

6-UDFN Exposed Pad

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

1.45W

Number of Elements :

2

Surface Mount :

yes

Power - Max :

510mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A 2V

Element Configuration :

Dual

Transistor Application :

SWITCHING

Factory Lead Time :

8 Weeks

Current - Collector (Ic) (Max) :

2A