PBSS4230PANP,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Voltage (VCEO) :

30V

Radiation Hardening :

No

Power - Max :

510mW

RoHS Status :

ROHS3 Compliant

Packaging :

Cut Tape (CT)

Case Connection :

COLLECTOR

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Transistor Type :

NPN, PNP

Current - Collector Cutoff (Max) :

100nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A 2V

Surface Mount :

yes

Number of Terminations :

6

Frequency - Transition :

120MHz

Max Collector Current :

3A

Number of Elements :

2

Current - Collector (Ic) (Max) :

2A

Published :

2012

Max Power Dissipation :

1.45W

Transition Frequency :

120MHz

Gain Bandwidth Product :

95MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Mounting Type :

Surface Mount

Factory Lead Time :

8 Weeks

Vce Saturation (Max) @ Ib, Ic :

290mV @ 200mA, 2A

Operating Temperature :

150°C TJ

Pin Count :

6

Transistor Element Material :

SILICON

Number of Pins :

6

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

30V

Package / Case :

6-UDFN Exposed Pad

Polarity :

NPN, PNP

Emitter Base Voltage (VEBO) :

7V

Collector Emitter Saturation Voltage :

-75mV