PBSS4230PAN,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

290mV @ 200mA, 2A

Collector Emitter Saturation Voltage :

60mV

Number of Elements :

2

Gain Bandwidth Product :

120MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A 2V

Frequency :

120MHz

Collector Base Voltage (VCBO) :

30V

Factory Lead Time :

20 Weeks

Mounting Type :

Surface Mount

Polarity :

NPN

Collector Emitter Voltage (VCEO) :

30V

Mount :

Surface Mount

Pin Count :

6

Published :

2012

Element Configuration :

Dual

Package / Case :

6-UDFN Exposed Pad

Power Dissipation :

2W

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

hFE Min :

250

Power - Max :

510mW

Current - Collector (Ic) (Max) :

2A

Max Collector Current :

3A

Radiation Hardening :

No

Number of Pins :

6

Max Power Dissipation :

1.45W

Packaging :

Cut Tape (CT)

Terminal Finish :

Tin (Sn)

Emitter Base Voltage (VEBO) :

7V

Current - Collector Cutoff (Max) :

100nA ICBO

Operating Temperature :

150°C TJ