PBSS4160XX
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- Mfr.Part #
- PBSS4160XX
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT89
- Stock
- 25,021
- In Stock ：
- 25,021
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Series :
- Automotive, AEC-Q101
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 1.35W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 170 @ 500mA 10V
- Reach Compliance Code :
- Compliant
- Frequency - Transition :
- 180MHz
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 1A
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Published :
- 2017
- Package / Case :
- TO-243AA
- Packaging :
- Tape and Reel (TR)
- Datasheets
- PBSS4160XX
NPN 150°C TJ 100nA ICBO TO-243AA Tape & Reel (TR) Surface Mount
PBSS4160XX Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 170 @ 500mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 50mA, 500mA.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.
PBSS4160XX Features
the DC current gain for this device is 170 @ 500mA 10V
the vce saturation(Max) is 200mV @ 50mA, 500mA
PBSS4160XX Applications
There are a lot of Nexperia USA Inc.
PBSS4160XX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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