PBSS4160V,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

500mW

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 5V

Collector Base Voltage (VCBO) :

80V

Gain Bandwidth Product :

220MHz

Base Part Number :

PBSS4160

Transition Frequency :

220MHz

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Package / Case :

SOT-563, SOT-666

Terminal Form :

Flat

Number of Pins :

6

Current - Collector Cutoff (Max) :

100nA

Emitter Base Voltage (VEBO) :

5V

Operating Temperature :

150°C TJ

Pin Count :

6

Width :

6.35mm

Terminal Finish :

Tin (Sn)

Max Breakdown Voltage :

60V

Max Collector Current :

1A

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Frequency :

220MHz

Height :

6.35mm

Element Configuration :

Single

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.35mm

Current - Collector (Ic) (Max) :

900mA

Radiation Hardening :

No

REACH SVHC :

No SVHC

Published :

2009

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Polarity/Channel Type :

NPN

Number of Elements :

1

Mount :

Surface Mount

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

60V

hFE Min :

250

Termination :

SMD/SMT

Weight :

4.535924g

Collector Emitter Breakdown Voltage :

60V

Terminal Position :

Dual

Factory Lead Time :

4 Weeks

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100mA, 1A

Number of Terminations :

6

Max Power Dissipation :

500mW