PBSS4160PANPS

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 500mA 2V / 120 @ 500mA 2V

Max Collector Current :

1A

Package / Case :

6-UDFN Exposed Pad

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

VCEsat-Max :

0.24 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Max Breakdown Voltage :

60V

Current - Collector Cutoff (Max) :

100nA ICBO

Frequency - Transition :

175MHz 125MHz

Mount :

Surface Mount

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Series :

Automotive, AEC-Q101

Power - Max :

370mW

Collector Emitter Voltage (VCEO) :

120mV

Terminal Form :

NO LEAD

Max Power Dissipation :

370mW

Polarity :

NPN, PNP

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

COLLECTOR

Number of Elements :

2

Transition Frequency :

175MHz

Reference Standard :

AEC-Q101; IEC-60134

JESD-30 Code :

S-PDSO-N6

Configuration :

SEPARATE, 2 ELEMENTS

Vce Saturation (Max) @ Ib, Ic :

120mV @ 50mA, 500mA / 340mV @ 100mA, 1A

Transistor Element Material :

SILICON

Terminal Position :

Dual

Published :

2015

Transistor Type :

NPN, PNP

Collector Emitter Breakdown Voltage :

60V