PBSS4160PANP,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

120mV @ 50mA, 500mA

Collector Emitter Voltage (VCEO) :

60V

Terminal Finish :

Tin (Sn)

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Frequency - Transition :

175MHz

Published :

2013

Base Part Number :

PBSS4160

Packaging :

Cut Tape (CT)

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Package / Case :

6-UDFN Exposed Pad

Transistor Type :

NPN, PNP

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

NPN, PNP

Collector Emitter Saturation Voltage :

-125mV

Current - Collector (Ic) (Max) :

1A

Max Power Dissipation :

1.45W

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

Element Configuration :

Dual

Collector Base Voltage (VCBO) :

60V

Factory Lead Time :

8 Weeks

Number of Elements :

2

Transition Frequency :

175MHz

Emitter Base Voltage (VEBO) :

7V

Mounting Type :

Surface Mount

Number of Terminations :

6

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Pins :

6

Power - Max :

510mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 500mA 2V

Gain Bandwidth Product :

125MHz

Max Collector Current :

1.5A