PBSS4160PANP,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Radiation Hardening :

No

Gain Bandwidth Product :

125MHz

RoHS Status :

ROHS3 Compliant

Max Collector Current :

1.5A

Factory Lead Time :

8 Weeks

Number of Elements :

2

Current - Collector (Ic) (Max) :

1A

Package / Case :

6-UDFN Exposed Pad

Mount :

Surface Mount

Pin Count :

6

JESD-609 Code :

e3

Packaging :

Cut Tape (CT)

Operating Temperature :

150°C TJ

Frequency - Transition :

175MHz

Number of Terminations :

6

Emitter Base Voltage (VEBO) :

7V

Base Part Number :

PBSS4160

Collector Emitter Saturation Voltage :

-125mV

Transistor Element Material :

SILICON

Polarity :

NPN, PNP

Collector Emitter Voltage (VCEO) :

60V

Terminal Finish :

Tin (Sn)

Vce Saturation (Max) @ Ib, Ic :

120mV @ 50mA, 500mA

Mounting Type :

Surface Mount

Number of Pins :

6

Published :

2013

Case Connection :

COLLECTOR

Max Power Dissipation :

1.45W

Collector Base Voltage (VCBO) :

60V

Element Configuration :

Dual

Current - Collector Cutoff (Max) :

100nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

510mW

Transition Frequency :

175MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 500mA 2V

Transistor Type :

NPN, PNP

Transistor Application :

SWITCHING