PBSS4160PANP,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Terminal Finish :

Tin (Sn)

Case Connection :

COLLECTOR

Power - Max :

510mW

Number of Elements :

2

Max Power Dissipation :

1.45W

Collector Emitter Saturation Voltage :

-125mV

Factory Lead Time :

8 Weeks

Element Configuration :

Dual

Frequency - Transition :

175MHz

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

60V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

120mV @ 50mA, 500mA

Radiation Hardening :

No

Gain Bandwidth Product :

125MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Operating Temperature :

150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 500mA 2V

Collector Emitter Voltage (VCEO) :

60V

Transition Frequency :

175MHz

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Current - Collector (Ic) (Max) :

1A

Package / Case :

6-UDFN Exposed Pad

Packaging :

Cut Tape (CT)

Published :

2013

Polarity :

NPN, PNP

Transistor Type :

NPN, PNP

Transistor Element Material :

SILICON

Mount :

Surface Mount

Number of Pins :

6

Max Collector Current :

1.5A

Base Part Number :

PBSS4160

Pin Count :

6

Emitter Base Voltage (VEBO) :

7V