PBSS4160PANP,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Type :

NPN, PNP

Max Power Dissipation :

1.45W

Polarity :

NPN, PNP

Number of Terminations :

6

Terminal Finish :

Tin (Sn)

Max Collector Current :

1.5A

Pin Count :

6

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Mount :

Surface Mount

Power - Max :

510mW

Published :

2013

Frequency - Transition :

175MHz

Packaging :

Cut Tape (CT)

Emitter Base Voltage (VEBO) :

7V

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 500mA 2V

Case Connection :

COLLECTOR

Collector Emitter Voltage (VCEO) :

60V

Number of Elements :

2

Current - Collector (Ic) (Max) :

1A

Factory Lead Time :

8 Weeks

Transition Frequency :

175MHz

Base Part Number :

PBSS4160

Radiation Hardening :

No

Number of Pins :

6

Collector Base Voltage (VCBO) :

60V

Gain Bandwidth Product :

125MHz

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

120mV @ 50mA, 500mA

Element Configuration :

Dual

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Package / Case :

6-UDFN Exposed Pad

Operating Temperature :

150°C TJ

Collector Emitter Saturation Voltage :

-125mV

Current - Collector Cutoff (Max) :

100nA ICBO