PBSS4160PAN,115
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- Mfr.Part #
- PBSS4160PAN,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 6-UDFN Exposed Pad
- Datasheet
- Download
- Description
- NOW NEXPERIA PBSS4160PAN - SMALL
- Stock
- 2,029
- In Stock ：
- 2,029
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 120mV @ 50mA, 500mA
- Max Power Dissipation :
- 1.45W
- Power - Max :
- 510mW
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 8 Weeks
- Pin Count :
- 6
- Base Part Number :
- PBSS4160
- Package / Case :
- 6-UDFN Exposed Pad
- Radiation Hardening :
- No
- Number of Pins :
- 6
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 1.5A
- hFE Min :
- 290
- Collector Emitter Saturation Voltage :
- 90mV
- Transistor Type :
- 2 NPN (Dual)
- Polarity :
- NPN, PNP
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 175MHz
- Packaging :
- Cut Tape (CT)
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Dual
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Base Voltage (VCBO) :
- 60V
- Published :
- 2013
- Terminal Finish :
- Tin (Sn)
- Current - Collector (Ic) (Max) :
- 1A
- Datasheets
- PBSS4160PAN,115
PBSS4160PAN,115 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Nexperia USA Inc. stock available at
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