PBSS4140T,235
- Mfr.Part #
- PBSS4140T,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO236AB
- Stock
- 133,330
- In Stock :
- 133,330
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Min Operating Temperature :
- -65°C
- Power - Max :
- 450mW
- Number of Pins :
- 3
- Max Operating Temperature :
- 150°C
- Frequency - Transition :
- 150MHz
- Radiation Hardening :
- No
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Base Voltage (VCBO) :
- 40V
- Published :
- 2009
- Max Power Dissipation :
- 450mW
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 40V
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Operating Temperature :
- 150°C TJ
- Frequency :
- 150MHz
- Factory Lead Time :
- 4 Weeks
- Max Collector Current :
- 1A
- Element Configuration :
- Single
- Base Part Number :
- PBSS4140
- Max Breakdown Voltage :
- 40V
- Current - Collector (Ic) (Max) :
- 1A
- Polarity :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- NPN
- Power Dissipation :
- 450mW
- Current - Collector Cutoff (Max) :
- 100nA
- Supplier Device Package :
- TO-236AB
- Gain Bandwidth Product :
- 150MHz
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 500mA 5V
- Datasheets
- PBSS4140T,235

NPN 150°C TJ 100nA 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS4140T,235 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 500mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Single BJT transistor can be broken down at a voltage of 40V volts.There is no device package available from the supplier for this product.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 1A volts.
PBSS4140T,235 Features
the DC current gain for this device is 300 @ 500mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the supplier device package of TO-236AB
PBSS4140T,235 Applications
There are a lot of Nexperia USA Inc.
PBSS4140T,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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