PBSS4140S,126
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- Mfr.Part #
- PBSS4140S,126
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO92-3
- Stock
- 32,002
- In Stock ：
- 32,002
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Terminal Finish :
- Tin
- Transition Frequency :
- 150MHz
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2009
- Configuration :
- Single
- JESD-30 Code :
- O-PBCY-T3
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector (Ic) (Max) :
- 1A
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 500mA 5V
- Reach Compliance Code :
- Unknown
- Packaging :
- Tape and Box (TB)
- Surface Mount :
- No
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Power - Max :
- 830mW
- ECCN Code :
- EAR99
- Base Part Number :
- PBSS4140
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 150MHz
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Terminal Position :
- BOTTOM
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheets
- PBSS4140S,126
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
PBSS4140S,126 Overview
DC current gain in this device equals 300 @ 500mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 100mA, 1A.As a result, the part has a transition frequency of 150MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
PBSS4140S,126 Features
the DC current gain for this device is 300 @ 500mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 150MHz
PBSS4140S,126 Applications
There are a lot of NXP USA Inc.
PBSS4140S,126 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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