PBSS4140DPN,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

JESD-609 Code :

e3

Polarity :

NPN, PNP

Height :

1mm

Gain Bandwidth Product :

150MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 500mA 5V

Max Breakdown Voltage :

40V

Packaging :

Tape and Reel (TR)

Published :

2001

Terminal Form :

Gull wing

ECCN Code :

EAR99

Base Part Number :

PBSS4140DPN

Max Collector Current :

1A

Frequency :

150MHz

Width :

1.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Number of Pins :

6

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

40V

Current - Collector Cutoff (Max) :

100nA

Operating Temperature :

150°C TJ

Emitter Base Voltage (VEBO) :

5V

Collector Base Voltage (VCBO) :

40V

Package / Case :

SC-74, SOT-457

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Transistor Type :

NPN, PNP

Max Power Dissipation :

370mW

Length :

3.1mm

Lead Free :

Lead Free

Pin Count :

6

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

40V

Collector Emitter Saturation Voltage :

500mV

Factory Lead Time :

4 Weeks

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Transition Frequency :

150MHz

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Radiation Hardening :

No

Power - Max :

600mW

Power Dissipation :

370mW