PBSS4130PANP,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Collector Current :

2A

Gain Bandwidth Product :

125MHz

Pin Count :

6

Operating Temperature :

150°C TJ

Transistor Type :

NPN, PNP

Number of Pins :

6

Collector Emitter Saturation Voltage :

-85mV

Frequency - Transition :

165MHz

Collector Base Voltage (VCBO) :

30V

Published :

2012

Number of Elements :

2

Current - Collector Cutoff (Max) :

100nA ICBO

Vce Saturation (Max) @ Ib, Ic :

100mV @ 50mA, 500mA

Mount :

Surface Mount

Power - Max :

510mW

Current - Collector (Ic) (Max) :

1A

Transition Frequency :

165MHz

Transistor Application :

SWITCHING

Emitter Base Voltage (VEBO) :

7V

Mounting Type :

Surface Mount

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

30V

Max Power Dissipation :

1.45W

Number of Terminations :

6

Terminal Finish :

Tin (Sn)

Packaging :

Cut Tape (CT)

Transistor Element Material :

SILICON

Base Part Number :

PBSS4130

Polarity :

NPN, PNP

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Case Connection :

COLLECTOR

Package / Case :

6-UDFN Exposed Pad

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 500mA 2V

RoHS Status :

ROHS3 Compliant