PBSS4130PANP,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

510mW

Transition Frequency :

165MHz

Number of Elements :

2

Max Collector Current :

2A

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Packaging :

Cut Tape (CT)

Pin Count :

6

Frequency - Transition :

165MHz

Current - Collector (Ic) (Max) :

1A

Vce Saturation (Max) @ Ib, Ic :

100mV @ 50mA, 500mA

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Package / Case :

6-UDFN Exposed Pad

Case Connection :

COLLECTOR

Operating Temperature :

150°C TJ

Collector Base Voltage (VCBO) :

30V

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 500mA 2V

Published :

2012

Gain Bandwidth Product :

125MHz

Collector Emitter Saturation Voltage :

-85mV

Collector Emitter Voltage (VCEO) :

30V

Mount :

Surface Mount

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

JESD-609 Code :

e3

Max Power Dissipation :

1.45W

Current - Collector Cutoff (Max) :

100nA ICBO

Polarity :

NPN, PNP

Mounting Type :

Surface Mount

Transistor Type :

NPN, PNP

Base Part Number :

PBSS4130

Emitter Base Voltage (VEBO) :

7V