PBSS4130PANP,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays

Factory Lead Time :

8 Weeks

Number of Elements :

2

Radiation Hardening :

No

Power - Max :

510mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Number of Terminations :

6

Current - Collector (Ic) (Max) :

1A

JESD-609 Code :

e3

Published :

2012

Max Collector Current :

2A

Collector Emitter Saturation Voltage :

-85mV

Number of Pins :

6

Collector Base Voltage (VCBO) :

30V

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

1.45W

Emitter Base Voltage (VEBO) :

7V

Vce Saturation (Max) @ Ib, Ic :

100mV @ 50mA, 500mA

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Case Connection :

COLLECTOR

Frequency - Transition :

165MHz

Transition Frequency :

165MHz

Operating Temperature :

150°C TJ

Package / Case :

6-UDFN Exposed Pad

Gain Bandwidth Product :

125MHz

Packaging :

Cut Tape (CT)

Transistor Application :

SWITCHING

Transistor Type :

NPN, PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 500mA 2V

Base Part Number :

PBSS4130

Pin Count :

6

Mounting Type :

Surface Mount

Polarity :

NPN, PNP

Collector Emitter Voltage (VCEO) :

30V

Transistor Element Material :

SILICON