PBSS4120T,215
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- Mfr.Part #
- PBSS4120T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 1A TO236AB
- Stock
- 2,669
- In Stock ：
- 2,669
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 30V
- Published :
- 2003
- hFE Min :
- 300
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 1A
- Base Part Number :
- PBSS4120
- Frequency :
- 100MHz
- Pin Count :
- 3
- Length :
- 3mm
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 500mA 2V
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 20V
- Collector Emitter Saturation Voltage :
- 250mV
- Width :
- 1.4mm
- Height :
- 1mm
- Max Power Dissipation :
- 480mW
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 20V
- Transition Frequency :
- 100MHz
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 1A
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Weight :
- 4.535924g
- Lead Free :
- Lead Free
- Power Dissipation :
- 480mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 20V
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Datasheets
- PBSS4120T,215
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS4120T,215 Overview
In this device, the DC current gain is 300 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 50mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
PBSS4120T,215 Features
the DC current gain for this device is 300 @ 500mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 50mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS4120T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4120T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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