PBSS4120T,215
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- Mfr.Part #
- PBSS4120T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 1A TO236AB
- Stock
- 2,669
- In Stock ：
- 2,669
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 20V
- Pin Count :
- 3
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 20V
- Max Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- PBSS4120
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 300
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 30V
- Transition Frequency :
- 100MHz
- Frequency :
- 100MHz
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 480mW
- Mounting Type :
- Surface Mount
- Height :
- 1mm
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 20V
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 500mA 2V
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Weight :
- 4.535924g
- Gain Bandwidth Product :
- 100MHz
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 1A
- Published :
- 2003
- Collector Emitter Saturation Voltage :
- 250mV
- Power Dissipation :
- 480mW
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 3mm
- Factory Lead Time :
- 4 Weeks
- Mount :
- Surface Mount
- Width :
- 1.4mm
- Datasheets
- PBSS4120T,215
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS4120T,215 Overview
In this device, the DC current gain is 300 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 50mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
PBSS4120T,215 Features
the DC current gain for this device is 300 @ 500mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 50mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS4120T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4120T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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