PBSS4120T,215
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- Mfr.Part #
- PBSS4120T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 1A TO236AB
- Stock
- 2,669
- In Stock ：
- 2,669
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- PBSS4120
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 3
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 250mV
- Published :
- 2003
- Transition Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 20V
- Emitter Base Voltage (VEBO) :
- 5V
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 4.535924g
- Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 30V
- Max Breakdown Voltage :
- 20V
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 500mA 2V
- hFE Min :
- 300
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Height :
- 1mm
- Collector Emitter Breakdown Voltage :
- 20V
- Max Collector Current :
- 1A
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Width :
- 1.4mm
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 1A
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 480mW
- Length :
- 3mm
- Power Dissipation :
- 480mW
- Gain Bandwidth Product :
- 100MHz
- Datasheets
- PBSS4120T,215
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS4120T,215 Overview
In this device, the DC current gain is 300 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 50mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
PBSS4120T,215 Features
the DC current gain for this device is 300 @ 500mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 50mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS4120T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4120T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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