PBSS4112PANP,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transition Frequency :

120MHz

Transistor Element Material :

SILICON

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

120V

Max Collector Current :

1.5A

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 500mA 2V

Current - Collector (Ic) (Max) :

1A

Gain Bandwidth Product :

100MHz

Mount :

Surface Mount

Mounting Type :

Surface Mount

Packaging :

Cut Tape (CT)

Pin Count :

6

Collector Emitter Saturation Voltage :

-150mV

Number of Pins :

6

Max Power Dissipation :

1.45W

Terminal Finish :

Tin (Sn)

Case Connection :

COLLECTOR

Transistor Type :

NPN, PNP

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

120mV @ 50mA, 500mA

Transistor Application :

SWITCHING

Number of Terminations :

6

Power - Max :

510mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

PBSS4112PAN

Number of Elements :

2

Frequency - Transition :

120MHz

Published :

2012

Collector Base Voltage (VCBO) :

120V

Operating Temperature :

150°C TJ

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Current - Collector Cutoff (Max) :

100nA ICBO

Emitter Base Voltage (VEBO) :

7V

Package / Case :

6-UDFN Exposed Pad

Polarity :

NPN, PNP