PBSS4041SP,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

275mV @ 400mA, 4A

Collector Emitter Voltage (VCEO) :

60V

Frequency :

110MHz

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

60V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

ECCN Code :

EAR99

Max Breakdown Voltage :

60V

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

110MHz

Time@Peak Reflow Temperature-Max (s) :

30

Max Power Dissipation :

2.3W

Element Configuration :

Dual

Published :

2010

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Number of Terminations :

8

Transistor Element Material :

SILICON

Factory Lead Time :

4 Weeks

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Gain Bandwidth Product :

110MHz

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Type :

2 PNP (Dual)

Radiation Hardening :

No

JESD-609 Code :

e4

Max Collector Current :

5.9A

hFE Min :

300

Polarity :

PNP

Number of Pins :

8

Power Dissipation :

2.3W

Collector Base Voltage (VCBO) :

60V

Base Part Number :

PBSS4041SP

Pin Count :

8

Mount :

Surface Mount

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 2A 2V

Emitter Base Voltage (VEBO) :

-5V

RoHS Status :

ROHS3 Compliant