PBSS4041SN,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e4

Vce Saturation (Max) @ Ib, Ic :

350mV @ 350mA, 7A

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Frequency :

130MHz

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Base Part Number :

PBSS4041SN

Power Dissipation :

2.3W

Collector Base Voltage (VCBO) :

60V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

150°C TJ

Element Configuration :

Dual

Collector Emitter Voltage (VCEO) :

60V

Collector Emitter Breakdown Voltage :

60V

Max Power Dissipation :

2.3W

ECCN Code :

EAR99

Pin Count :

8

Radiation Hardening :

No

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2010

Number of Terminations :

8

Transistor Type :

2 NPN (Dual)

Factory Lead Time :

4 Weeks

Max Breakdown Voltage :

60V

Transistor Application :

SWITCHING

Transition Frequency :

130MHz

Gain Bandwidth Product :

130MHz

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Max Collector Current :

6.7A

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 4A 2V

Number of Pins :

8

hFE Min :

300

Emitter Base Voltage (VEBO) :

5V

Current - Collector Cutoff (Max) :

100nA

Polarity :

NPN