PBSS4041SN,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

hFE Min :

300

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

2

Max Power Dissipation :

2.3W

Transition Frequency :

130MHz

Operating Temperature :

150°C TJ

Number of Terminations :

8

Transistor Application :

SWITCHING

Power Dissipation :

2.3W

Max Breakdown Voltage :

60V

Number of Pins :

8

Collector Emitter Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gain Bandwidth Product :

130MHz

Element Configuration :

Dual

Frequency :

130MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 4A 2V

Packaging :

Tape and Reel (TR)

Pin Count :

8

Mount :

Surface Mount

Transistor Type :

2 NPN (Dual)

Vce Saturation (Max) @ Ib, Ic :

350mV @ 350mA, 7A

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA

Collector Base Voltage (VCBO) :

60V

Transistor Element Material :

SILICON

Published :

2010

ECCN Code :

EAR99

Polarity :

NPN

Factory Lead Time :

4 Weeks

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

60V

Base Part Number :

PBSS4041SN

Emitter Base Voltage (VEBO) :

5V

JESD-609 Code :

e4

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

6.7A

Mounting Type :

Surface Mount

Radiation Hardening :

No