PBSS4041PT,215
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- Mfr.Part #
- PBSS4041PT,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 2.7A TO236AB
- Stock
- 19,282
- In Stock ：
- 19,282
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 1.1W
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- hFE Min :
- 35
- Power Dissipation :
- 1.1W
- Frequency :
- 150MHz
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Cut Tape (CT)
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Base Part Number :
- PBSS4041P
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Published :
- 2010
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 60V
- Gain Bandwidth Product :
- 150MHz
- Number of Terminations :
- 3
- Max Collector Current :
- 2.7A
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 1A 2V
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 60V
- Transition Frequency :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 360mV @ 300mA, 3A
- Transistor Type :
- PNP
- Datasheets
- PBSS4041PT,215
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
PBSS4041PT,215 Overview
This device has a DC current gain of 150 @ 1A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 360mV @ 300mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 2.7A volts is possible.
PBSS4041PT,215 Features
the DC current gain for this device is 150 @ 1A 2V
the vce saturation(Max) is 360mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PBSS4041PT,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4041PT,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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