PBSS4032SPN,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

30V

Transistor Element Material :

SILICON

Number of Elements :

2

Emitter Base Voltage (VEBO) :

-5V

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

30V

Max Breakdown Voltage :

30V

Mount :

Surface Mount

Max Power Dissipation :

2.3W

Vce Saturation (Max) @ Ib, Ic :

450mV @ 300mA, 6A / 510mV @ 250mA, 5A

Number of Pins :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Collector Emitter Breakdown Voltage :

30V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Max Collector Current :

4.8A

Number of Terminations :

8

Gain Bandwidth Product :

140MHz

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 2A 2V / 150 @ 2A 2V

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Factory Lead Time :

4 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Polarity :

NPN, PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Base Part Number :

PBSS4032SPN

Pin Count :

8

Transition Frequency :

140MHz

hFE Min :

300

Published :

2010

Element Configuration :

Dual

Transistor Type :

NPN, PNP

Frequency - Transition :

140MHz 115MHz

JESD-609 Code :

e4

Power Dissipation :

2.3W

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Frequency :

140MHz

Current - Collector (Ic) (Max) :

5.7A 4.8A