PBSS4032SP,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Transistor Type :

2 PNP (Dual)

Published :

2010

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 2A 2V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power - Max :

2.3W

Base Part Number :

PBSS4032SP

Emitter Base Voltage (VEBO) :

-5V

Collector Emitter Voltage (VCEO) :

510mV

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Factory Lead Time :

4 Weeks

Transition Frequency :

115MHz

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

30V

Element Configuration :

Dual

Collector Base Voltage (VCBO) :

30V

Number of Elements :

2

ECCN Code :

EAR99

Gain Bandwidth Product :

115MHz

JESD-609 Code :

e4

Terminal Form :

Gull wing

Radiation Hardening :

No

Max Power Dissipation :

2.3W

Number of Terminations :

8

Mount :

Surface Mount

Pin Count :

8

Current - Collector Cutoff (Max) :

100nA

hFE Min :

200

Max Collector Current :

4.8A

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Vce Saturation (Max) @ Ib, Ic :

510mV @ 250mA, 5A

Polarity :

PNP

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Max Breakdown Voltage :

30V