PBSS4032SP,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Voltage (VCEO) :

510mV

Power - Max :

2.3W

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Current - Collector Cutoff (Max) :

100nA

Max Breakdown Voltage :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Max Collector Current :

4.8A

Radiation Hardening :

No

Transition Frequency :

115MHz

Transistor Type :

2 PNP (Dual)

Number of Pins :

8

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Max Power Dissipation :

2.3W

Emitter Base Voltage (VEBO) :

-5V

hFE Min :

200

Gain Bandwidth Product :

115MHz

Element Configuration :

Dual

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Published :

2010

Mount :

Surface Mount

Base Part Number :

PBSS4032SP

JESD-609 Code :

e4

Packaging :

Tape and Reel (TR)

Factory Lead Time :

4 Weeks

RoHS Status :

ROHS3 Compliant

Polarity :

PNP

Pin Count :

8

Vce Saturation (Max) @ Ib, Ic :

510mV @ 250mA, 5A

Terminal Form :

Gull wing

ECCN Code :

EAR99

Number of Terminations :

8

Collector Base Voltage (VCBO) :

30V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 2A 2V

Collector Emitter Breakdown Voltage :

30V