PBSS4032SP,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

hFE Min :

200

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Power - Max :

2.3W

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

510mV

Max Breakdown Voltage :

30V

Max Collector Current :

4.8A

Radiation Hardening :

No

Factory Lead Time :

4 Weeks

Element Configuration :

Dual

Base Part Number :

PBSS4032SP

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

8

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

30V

Collector Emitter Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Number of Pins :

8

Max Power Dissipation :

2.3W

Terminal Form :

Gull wing

Transistor Type :

2 PNP (Dual)

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 2A 2V

Transition Frequency :

115MHz

Published :

2010

Pin Count :

8

Polarity :

PNP

Vce Saturation (Max) @ Ib, Ic :

510mV @ 250mA, 5A

Current - Collector Cutoff (Max) :

100nA

Gain Bandwidth Product :

115MHz

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

-5V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e4