PBSS4032PD,115

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Mfr.Part #
PBSS4032PD,115
Manufacturer
NXP Semiconductors
Package / Case
SC-74, SOT-457
Datasheet
Download
Description
NEXPERIA PBSS4032PD - SMALL SIGN
Stock
61,120
In Stock :
61,120

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Vce Saturation (Max) @ Ib, Ic :
395mV @ 300mA, 3A
Gain Bandwidth Product :
104MHz
Published :
2009
Package / Case :
SC-74, SOT-457
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 1A 2V
Emitter Base Voltage (VEBO) :
-5V
Polarity/Channel Type :
PNP
Transistor Element Material :
SILICON
Terminal Position :
Dual
Transistor Type :
PNP
Terminal Finish :
Tin (Sn)
Packaging :
Cut Tape (CT)
Max Power Dissipation :
1W
Base Part Number :
PBSS4032P
Number of Pins :
6
hFE Min :
25
Collector Base Voltage (VCBO) :
30V
Collector Emitter Breakdown Voltage :
30V
Mounting Type :
Surface Mount
Number of Terminations :
6
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Power Dissipation :
1W
Terminal Form :
Gull wing
JESD-609 Code :
e3
Mount :
Surface Mount
Factory Lead Time :
4 Weeks
Operating Temperature :
150°C TJ
Pin Count :
6
Number of Elements :
1
Max Collector Current :
2.7A
Max Breakdown Voltage :
30V
Radiation Hardening :
No
Transition Frequency :
104MHz
Collector Emitter Voltage (VCEO) :
30V
Element Configuration :
Single
Current - Collector Cutoff (Max) :
100nA
Datasheets
PBSS4032PD,115
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS4032PD,115 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SC-74, SOT-457, Base Part Number:PBSS4032P, Number of Pins:6, Mounting Type:Surface Mount, Number of Terminations:6, Operating Temperature:150°C TJ, PBSS4032PD,115 pinout, PBSS4032PD,115 datasheet PDF, PBSS4032PD,115 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS4032PD,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PBSS4032PD,115


PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Cut Tape (CT) Surface Mount

PBSS4032PD,115 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 395mV @ 300mA, 3A.The emitter base voltage can be kept at -5V for high efficiency.The part has a transition frequency of 104MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 2.7A volts at Single BJT transistors maximum.

PBSS4032PD,115 Features


the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 395mV @ 300mA, 3A
the emitter base voltage is kept at -5V
a transition frequency of 104MHz


PBSS4032PD,115 Applications


There are a lot of Nexperia USA Inc.
PBSS4032PD,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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