PBSS4032PD,115
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- Mfr.Part #
- PBSS4032PD,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- NEXPERIA PBSS4032PD - SMALL SIGN
- Stock
- 61,120
- In Stock ：
- 61,120
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 6
- Transition Frequency :
- 104MHz
- Number of Pins :
- 6
- Emitter Base Voltage (VEBO) :
- -5V
- Gain Bandwidth Product :
- 104MHz
- hFE Min :
- 25
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 395mV @ 300mA, 3A
- Published :
- 2009
- Transistor Type :
- PNP
- Pin Count :
- 6
- Max Breakdown Voltage :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Base Part Number :
- PBSS4032P
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 1W
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 1W
- Max Collector Current :
- 2.7A
- Terminal Form :
- Gull wing
- Packaging :
- Cut Tape (CT)
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Package / Case :
- SC-74, SOT-457
- Collector Emitter Voltage (VCEO) :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Current - Collector Cutoff (Max) :
- 100nA
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Datasheets
- PBSS4032PD,115
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Cut Tape (CT) Surface Mount
PBSS4032PD,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 395mV @ 300mA, 3A.The emitter base voltage can be kept at -5V for high efficiency.The part has a transition frequency of 104MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 2.7A volts at Single BJT transistors maximum.
PBSS4032PD,115 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 395mV @ 300mA, 3A
the emitter base voltage is kept at -5V
a transition frequency of 104MHz
PBSS4032PD,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4032PD,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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