PBSS4032NT,215
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- Mfr.Part #
- PBSS4032NT,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 2.6A TO236AB
- Stock
- 140,657
- In Stock ：
- 140,657
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 30V
- Packaging :
- Cut Tape (CT)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 1.1W
- Current - Collector Cutoff (Max) :
- 100nA
- Frequency :
- 180MHz
- Collector Base Voltage (VCBO) :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Terminal Position :
- Dual
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 300mA, 3A
- Mount :
- Surface Mount
- Max Collector Current :
- 2.6A
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 180MHz
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Published :
- 2009
- Terminal Form :
- Gull wing
- hFE Min :
- 100
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- PBSS4032N
- Number of Pins :
- 3
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 3
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 1.1W
- Gain Bandwidth Product :
- 180MHz
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Datasheets
- PBSS4032NT,215
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
PBSS4032NT,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 1A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 180MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 2.6A volts.
PBSS4032NT,215 Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
PBSS4032NT,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4032NT,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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