PBSS3540E,115
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- Mfr.Part #
- PBSS3540E,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.5A SC75
- Stock
- 45,092
- In Stock ：
- 45,092
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Transition Frequency :
- 300MHz
- Published :
- 2009
- Qualification Status :
- Not Qualified
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Current - Collector (Ic) (Max) :
- 500mA
- Package / Case :
- SC-75, SOT-416
- Base Part Number :
- PBSS3540
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- Configuration :
- Single
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- ECCN Code :
- EAR99
- Power Dissipation-Max (Abs) :
- 0.25W
- Frequency - Transition :
- 300MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Surface Mount :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 50mA, 500mA
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PDSO-G3
- Peak Reflow Temperature (Cel) :
- 260
- Power - Max :
- 250mW
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- PBSS3540E,115
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-75, SOT-416 Tape & Reel (TR) Surface Mount
PBSS3540E,115 Overview
In this device, the DC current gain is 150 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 50mA, 500mA.300MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 40V.
PBSS3540E,115 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 350mV @ 50mA, 500mA
a transition frequency of 300MHz
PBSS3540E,115 Applications
There are a lot of NXP USA Inc.
PBSS3540E,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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