PBSS3515E,115
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- Mfr.Part #
- PBSS3515E,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS PNP 15V 0.5A SC75
- Stock
- 40,862
- In Stock ：
- 40,862
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation-Max (Abs) :
- 0.25W
- Polarity/Channel Type :
- PNP
- Base Part Number :
- PBSS3515
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 15V
- Transition Frequency :
- 280MHz
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PDSO-G3
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Power - Max :
- 250mW
- Published :
- 2005
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- Terminal Position :
- Dual
- Current - Collector (Ic) (Max) :
- 500mA
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 280MHz
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Package / Case :
- SC-75, SOT-416
- Datasheets
- PBSS3515E,115
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-75, SOT-416 Tape & Reel (TR) Surface Mount
PBSS3515E,115 Overview
In this device, the DC current gain is 150 @ 100mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 50mA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.There is a 15V maximal voltage in the device due to collector-emitter breakdown.
PBSS3515E,115 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
a transition frequency of 280MHz
PBSS3515E,115 Applications
There are a lot of NXP USA Inc.
PBSS3515E,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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