PBSS306PZ,135
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- Mfr.Part #
- PBSS306PZ,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 4.1A SOT223
- Stock
- 66,360
- In Stock ：
- 66,360
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Package / Case :
- TO-261-4, TO-261AA
- hFE Min :
- 200
- Turn Off Time-Max (toff) :
- 325ns
- Weight :
- 4.535924g
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Base Part Number :
- PBSS306P
- Vce Saturation (Max) @ Ib, Ic :
- 325mV @ 410mA, 4.1A
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 100MHz
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Max Collector Current :
- 4.1A
- Number of Terminations :
- 4
- Transition Frequency :
- 100MHz
- Height :
- 6.35mm
- Pin Count :
- 4
- Radiation Hardening :
- No
- Max Power Dissipation :
- 2W
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 4
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Published :
- 2011
- Termination :
- SMD/SMT
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Power Dissipation :
- 2W
- Max Breakdown Voltage :
- 100V
- Width :
- 6.35mm
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Frequency :
- 100MHz
- Length :
- 12.7mm
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 100V
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 100V
- Case Connection :
- COLLECTOR
- Datasheets
- PBSS306PZ,135
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBSS306PZ,135 Overview
This device has a DC current gain of 100 @ 2A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 325mV @ 410mA, 4.1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 4.1A volts is possible.
PBSS306PZ,135 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 325mV @ 410mA, 4.1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS306PZ,135 Applications
There are a lot of Nexperia USA Inc.
PBSS306PZ,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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