PBSS306PX,115
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- Mfr.Part #
- PBSS306PX,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 3.7A SOT89
- Stock
- 195
- In Stock ：
- 195
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 2.1W
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Max Power Dissipation :
- 2.1W
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Weight :
- 4.535924g
- Lead Free :
- Lead Free
- Frequency :
- 100MHz
- Published :
- 2009
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 100MHz
- Transition Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 400mA, 4A
- Number of Pins :
- 3
- Base Part Number :
- PBSS306P
- Mount :
- Surface Mount
- Max Collector Current :
- 3.7A
- Case Connection :
- COLLECTOR
- Height :
- 6.35mm
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- PNP
- hFE Min :
- 200
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Width :
- 6.35mm
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 12.7mm
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Package / Case :
- TO-243AA
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 100V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- Pin Count :
- 3
- Termination :
- SMD/SMT
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 100V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- PBSS306PX,115
PBSS306PX,115 Documents
SOT89.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS306PX,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 2A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 400mA, 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 3.7A volts at its maximum.
PBSS306PX,115 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 300mV @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS306PX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS306PX,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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