PBSS306PX,115
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- Mfr.Part #
- PBSS306PX,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 3.7A SOT89
- Stock
- 195
- In Stock ：
- 195
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Flat
- Max Breakdown Voltage :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Weight :
- 4.535924g
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 100MHz
- Height :
- 6.35mm
- Width :
- 6.35mm
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Max Power Dissipation :
- 2.1W
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Package / Case :
- TO-243AA
- ECCN Code :
- EAR99
- Max Collector Current :
- 3.7A
- Lead Free :
- Lead Free
- Length :
- 12.7mm
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 100V
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 400mA, 4A
- Published :
- 2009
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 100V
- Termination :
- SMD/SMT
- hFE Min :
- 200
- Base Part Number :
- PBSS306P
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- Power Dissipation :
- 2.1W
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Datasheets
- PBSS306PX,115
SOT89.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS306PX,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 2A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 400mA, 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 3.7A volts at its maximum.
PBSS306PX,115 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 300mV @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS306PX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS306PX,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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