PBSS306NZ,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2009

Power Dissipation :

700mW

Emitter Base Voltage (VEBO) :

5V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

2W

Lead Free :

Lead Free

Pin Count :

4

Power - Max :

2W

Collector Base Voltage (VCBO) :

100V

Element Configuration :

Single

Transistor Application :

SWITCHING

Package / Case :

TO-261-4, TO-261AA

Mount :

Surface Mount

JESD-609 Code :

e3

Transistor Type :

NPN

Termination :

SMD/SMT

Vce Saturation (Max) @ Ib, Ic :

300mV @ 255mA, 5.1A

Terminal Position :

Dual

Transition Frequency :

110MHz

Collector Emitter Breakdown Voltage :

100V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

100nA ICBO

Max Breakdown Voltage :

100V

Transistor Element Material :

SILICON

Number of Terminations :

4

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

100V

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Number of Elements :

1

Gain Bandwidth Product :

110MHz

Case Connection :

COLLECTOR

Max Collector Current :

5.1A

Height :

6.35mm

Base Part Number :

PBSS306N

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

hFE Min :

200

Length :

6.35mm

Weight :

4.535924g

Width :

6.35mm

Terminal Finish :

Tin (Sn)

Polarity/Channel Type :

NPN

Frequency :

110MHz

Number of Pins :

4

Mounting Type :

Surface Mount