PBSS306NX,115
- Mfr.Part #
- PBSS306NX,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 4.5A SOT89
- Stock
- 5,010
- In Stock :
- 5,010
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 6.35mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Collector Base Voltage (VCBO) :
- 100V
- Power Dissipation :
- 2.1W
- Max Power Dissipation :
- 2.1W
- Max Collector Current :
- 4.5A
- Element Configuration :
- Single
- Number of Pins :
- 3
- Published :
- 2009
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Width :
- 6.35mm
- Package / Case :
- TO-243AA
- Weight :
- 4.535924g
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Length :
- 12.7mm
- Radiation Hardening :
- No
- Transition Frequency :
- 110MHz
- Termination :
- SMD/SMT
- Transistor Type :
- NPN
- Frequency :
- 110MHz
- hFE Min :
- 200
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Base Part Number :
- PBSS306N
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Gain Bandwidth Product :
- 110MHz
- Vce Saturation (Max) @ Ib, Ic :
- 245mV @ 225mA, 4.5A
- Max Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 100V
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 100V
- Datasheets
- PBSS306NX,115
SOT89.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS306NX,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 2A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 245mV @ 225mA, 4.5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 110MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 4.5A volts at its maximum.
PBSS306NX,115 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 245mV @ 225mA, 4.5A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz
PBSS306NX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS306NX,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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