PBSS305PD,115
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- Mfr.Part #
- PBSS305PD,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A 6TSOP
- Stock
- 6,946
- In Stock ：
- 6,946
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 145 @ 1A 2V
- Vce Saturation (Max) @ Ib, Ic :
- 395mV @ 300mA, 3A
- Frequency :
- 110MHz
- Max Breakdown Voltage :
- 100V
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 100V
- Number of Terminations :
- 6
- Length :
- 3.1mm
- Collector Emitter Saturation Voltage :
- 395mV
- Polarity/Channel Type :
- PNP
- Base Part Number :
- PBSS305P
- Lead Free :
- Lead Free
- Pin Count :
- 6
- Packaging :
- Tape and Reel (TR)
- Power - Max :
- 1.1W
- Max Collector Current :
- 2A
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Gull wing
- Width :
- 1.7mm
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Package / Case :
- SC-74, SOT-457
- Collector Emitter Voltage (VCEO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Number of Pins :
- 6
- Power Dissipation :
- 2.5W
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 2.5W
- Transition Frequency :
- 110MHz
- Published :
- 2006
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- PNP
- Height :
- 1mm
- Collector Emitter Breakdown Voltage :
- 100V
- Gain Bandwidth Product :
- 110MHz
- Datasheets
- PBSS305PD,115
PBSS305PD,115 Documents
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS305PD,115 Overview
In this device, the DC current gain is 145 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 395mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 395mV @ 300mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 110MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS305PD,115 Features
the DC current gain for this device is 145 @ 1A 2V
a collector emitter saturation voltage of 395mV
the vce saturation(Max) is 395mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz
PBSS305PD,115 Applications
There are a lot of Nexperia USA Inc.
PBSS305PD,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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