PBSS305PD,115
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- Mfr.Part #
- PBSS305PD,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A 6TSOP
- Stock
- 6,946
- In Stock ：
- 6,946
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 110MHz
- Power - Max :
- 1.1W
- Power Dissipation :
- 2.5W
- Gain Bandwidth Product :
- 110MHz
- Number of Pins :
- 6
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 100V
- Length :
- 3.1mm
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 6
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 145 @ 1A 2V
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- PBSS305P
- Collector Emitter Saturation Voltage :
- 395mV
- Mount :
- Surface Mount
- Height :
- 1mm
- Width :
- 1.7mm
- Max Collector Current :
- 2A
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2006
- Transition Frequency :
- 110MHz
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 2.5W
- Current - Collector Cutoff (Max) :
- 100nA
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 6
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 395mV @ 300mA, 3A
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Base Voltage (VCBO) :
- 100V
- Package / Case :
- SC-74, SOT-457
- Datasheets
- PBSS305PD,115
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS305PD,115 Overview
In this device, the DC current gain is 145 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 395mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 395mV @ 300mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 110MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS305PD,115 Features
the DC current gain for this device is 145 @ 1A 2V
a collector emitter saturation voltage of 395mV
the vce saturation(Max) is 395mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz
PBSS305PD,115 Applications
There are a lot of Nexperia USA Inc.
PBSS305PD,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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