PBSS305ND,115
- Mfr.Part #
- PBSS305ND,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A 6TSOP
- Stock
- 2,235
- In Stock :
- 2,235
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 2.5W
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- SC-74, SOT-457
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 170 @ 500mA 2V
- Turn Off Time-Max (toff) :
- 589ns
- Gain Bandwidth Product :
- 140MHz
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 100V
- Lead Free :
- Lead Free
- Base Part Number :
- PBSS305N
- Max Collector Current :
- 3A
- Number of Pins :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Time-Max (ton) :
- 355ns
- Max Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Number of Terminations :
- 6
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 100V
- Pin Count :
- 6
- Vce Saturation (Max) @ Ib, Ic :
- 360mV @ 400mA, 4A
- Power - Max :
- 1.1W
- Polarity/Channel Type :
- NPN
- Current - Collector (Ic) (Max) :
- 1A
- Frequency :
- 140MHz
- Collector Emitter Breakdown Voltage :
- 100V
- Transition Frequency :
- 140MHz
- Max Power Dissipation :
- 2.5W
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- Dual
- Published :
- 2007
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Datasheets
- PBSS305ND,115

NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS305ND,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 170 @ 500mA 2V.When VCE saturation is 360mV @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 140MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
PBSS305ND,115 Features
the DC current gain for this device is 170 @ 500mA 2V
the vce saturation(Max) is 360mV @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz
PBSS305ND,115 Applications
There are a lot of Nexperia USA Inc.
PBSS305ND,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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