PBSS305ND,115
- Mfr.Part #
- PBSS305ND,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- NEXPERIA PBSS305ND - SMALL SIGNA
- Stock
- 2,235
- In Stock :
- 2,235
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 6
- Max Breakdown Voltage :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 1.1W
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 2.5W
- Package / Case :
- SC-74, SOT-457
- Max Power Dissipation :
- 2.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 170 @ 500mA 2V
- Frequency :
- 140MHz
- Transition Frequency :
- 140MHz
- JESD-609 Code :
- e3
- Current - Collector (Ic) (Max) :
- 1A
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Published :
- 2007
- Base Part Number :
- PBSS305N
- Number of Terminations :
- 6
- Vce Saturation (Max) @ Ib, Ic :
- 360mV @ 400mA, 4A
- Turn Off Time-Max (toff) :
- 589ns
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 100V
- Gain Bandwidth Product :
- 140MHz
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Pins :
- 6
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Turn On Time-Max (ton) :
- 355ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 3A
- Factory Lead Time :
- 4 Weeks
- Datasheets
- PBSS305ND,115
PBSS305ND,115 Documents

NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS305ND,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 170 @ 500mA 2V.When VCE saturation is 360mV @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 140MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
PBSS305ND,115 Features
the DC current gain for this device is 170 @ 500mA 2V
the vce saturation(Max) is 360mV @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz
PBSS305ND,115 Applications
There are a lot of Nexperia USA Inc.
PBSS305ND,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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