PBSS305ND,115
- Mfr.Part #
- PBSS305ND,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- NEXPERIA PBSS305ND - SMALL SIGNA
- Stock
- 2,235
- In Stock :
- 2,235
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Max Collector Current :
- 3A
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 100V
- Transition Frequency :
- 140MHz
- Collector Base Voltage (VCBO) :
- 100V
- Turn Off Time-Max (toff) :
- 589ns
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 360mV @ 400mA, 4A
- Gain Bandwidth Product :
- 140MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 170 @ 500mA 2V
- Number of Pins :
- 6
- Published :
- 2007
- Max Breakdown Voltage :
- 100V
- Frequency :
- 140MHz
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Turn On Time-Max (ton) :
- 355ns
- Max Power Dissipation :
- 2.5W
- Power - Max :
- 1.1W
- Collector Emitter Voltage (VCEO) :
- 100V
- Power Dissipation :
- 2.5W
- Current - Collector Cutoff (Max) :
- 100nA
- Current - Collector (Ic) (Max) :
- 1A
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 4 Weeks
- Mount :
- Surface Mount
- Pin Count :
- 6
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- NPN
- Base Part Number :
- PBSS305N
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 6
- Package / Case :
- SC-74, SOT-457
- Lead Free :
- Lead Free
- Datasheets
- PBSS305ND,115

NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS305ND,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 170 @ 500mA 2V.When VCE saturation is 360mV @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 140MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
PBSS305ND,115 Features
the DC current gain for this device is 170 @ 500mA 2V
the vce saturation(Max) is 360mV @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz
PBSS305ND,115 Applications
There are a lot of Nexperia USA Inc.
PBSS305ND,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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