PBSS304PX,115
- Mfr.Part #
- PBSS304PX,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 4.2A SOT89
- Stock
- 169,360
- In Stock :
- 169,360
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 4.2A
- Weight :
- 4.535924g
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 2A 2V
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Length :
- 12.7mm
- Pin Count :
- 3
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 130MHz
- Package / Case :
- TO-243AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 60V
- Terminal Form :
- Flat
- Height :
- 6.35mm
- Published :
- 2006
- Vce Saturation (Max) @ Ib, Ic :
- 310mV @ 210mA, 4.2A
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Frequency :
- 130MHz
- Base Part Number :
- PBSS304P
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 2.1W
- Number of Elements :
- 1
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Termination :
- SMD/SMT
- Width :
- 6.35mm
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Transition Frequency :
- 130MHz
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Type :
- PNP
- Max Power Dissipation :
- 2.1W
- Collector Emitter Breakdown Voltage :
- 60V
- Turn On Time-Max (ton) :
- 80ns
- Collector Emitter Voltage (VCEO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 200
- Datasheets
- PBSS304PX,115
SOT89.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS304PX,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 310mV @ 210mA, 4.2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 130MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 4.2A volts.
PBSS304PX,115 Features
the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 310mV @ 210mA, 4.2A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
PBSS304PX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS304PX,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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