PBSS304PD,115
- Mfr.Part #
- PBSS304PD,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- NEXPERIA PBSS304PD - SMALL SIGNA
- Stock
- 3,112
- In Stock :
- 3,112
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA
- Base Part Number :
- PBSS304P
- Package / Case :
- SC-74, SOT-457
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 155 @ 500mA 2V
- Transistor Element Material :
- SILICON
- Current - Collector (Ic) (Max) :
- 1A
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 80V
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Frequency :
- 110MHz
- Max Breakdown Voltage :
- 80V
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 2.5W
- Number of Terminations :
- 6
- Number of Pins :
- 6
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 540mV @ 500mA, 5A
- Turn On Time-Max (ton) :
- 90ns
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 110MHz
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 80V
- Terminal Form :
- Gull wing
- Transition Frequency :
- 110MHz
- Max Power Dissipation :
- 1.1W
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Published :
- 2009
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Max Collector Current :
- 3A
- Pin Count :
- 6
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 80V
- Datasheets
- PBSS304PD,115
PBSS304PD,115 Documents

PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS304PD,115 Overview
This device has a DC current gain of 155 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 540mV @ 500mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 110MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 3A volts is possible.
PBSS304PD,115 Features
the DC current gain for this device is 155 @ 500mA 2V
the vce saturation(Max) is 540mV @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz
PBSS304PD,115 Applications
There are a lot of Nexperia USA Inc.
PBSS304PD,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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