PBSS304PD,115
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- Mfr.Part #
- PBSS304PD,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- NEXPERIA PBSS304PD - SMALL SIGNA
- Stock
- 3,112
- In Stock ：
- 3,112
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2009
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- Number of Terminations :
- 6
- Frequency :
- 110MHz
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Base Voltage (VCBO) :
- 80V
- Current - Collector Cutoff (Max) :
- 100nA
- Max Collector Current :
- 3A
- Radiation Hardening :
- No
- Number of Pins :
- 6
- Base Part Number :
- PBSS304P
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Package / Case :
- SC-74, SOT-457
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 155 @ 500mA 2V
- Mount :
- Surface Mount
- Power Dissipation :
- 2.5W
- Transistor Application :
- SWITCHING
- Pin Count :
- 6
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 80V
- Turn On Time-Max (ton) :
- 90ns
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Max Power Dissipation :
- 1.1W
- Vce Saturation (Max) @ Ib, Ic :
- 540mV @ 500mA, 5A
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 1A
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Gain Bandwidth Product :
- 110MHz
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 110MHz
- Datasheets
- PBSS304PD,115
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS304PD,115 Overview
This device has a DC current gain of 155 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 540mV @ 500mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 110MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 3A volts is possible.
PBSS304PD,115 Features
the DC current gain for this device is 155 @ 500mA 2V
the vce saturation(Max) is 540mV @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz
PBSS304PD,115 Applications
There are a lot of Nexperia USA Inc.
PBSS304PD,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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