PBSS303PZ,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Turn On Time-Max (ton) :

70ns

Published :

2009

Base Part Number :

PBSS303P

Turn Off Time-Max (toff) :

320ns

Weight :

45.359237g

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 1A 2V

Collector Emitter Voltage (VCEO) :

30V

REACH SVHC :

No SVHC

Radiation Hardening :

No

Terminal Position :

Dual

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Package / Case :

TO-261-4, TO-261AA

Max Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Polarity/Channel Type :

PNP

Pin Count :

4

Mounting Type :

Surface Mount

Power Dissipation :

700mW

Factory Lead Time :

4 Weeks

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

5V

Gain Bandwidth Product :

130MHz

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Width :

6.35mm

Height :

6.35mm

Length :

12.7mm

Number of Pins :

4

JESD-609 Code :

e3

Termination :

SMD/SMT

Collector Emitter Breakdown Voltage :

30V

hFE Min :

250

Transistor Type :

PNP

Number of Elements :

1

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Transition Frequency :

130MHz

Vce Saturation (Max) @ Ib, Ic :

265mV @ 265mA, 5.3A

Number of Terminations :

4

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

130MHz

Max Power Dissipation :

2W

Power - Max :

2W

Max Collector Current :

5.3A

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Current - Collector Cutoff (Max) :

100nA ICBO