PBSS303ND,115
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- Mfr.Part #
- PBSS303ND,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A 6TSOP
- Stock
- 1,814
- In Stock ：
- 1,814
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 140MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Transition Frequency :
- 140MHz
- Published :
- 2007
- Max Power Dissipation :
- 2.5W
- Max Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Number of Pins :
- 6
- Collector Emitter Voltage (VCEO) :
- 60V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Power - Max :
- 1.1W
- Pin Count :
- 6
- Base Part Number :
- PBSS303N
- Vce Saturation (Max) @ Ib, Ic :
- 515mV @ 600mA, 6A
- Current - Collector (Ic) (Max) :
- 1A
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 2.5W
- Collector Emitter Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Package / Case :
- SC-74, SOT-457
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 345 @ 500mA 2V
- Collector Base Voltage (VCBO) :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Type :
- NPN
- Frequency :
- 140MHz
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 3A
- Number of Terminations :
- 6
- Terminal Finish :
- Tin (Sn)
- Datasheets
- PBSS303ND,115
NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS303ND,115 Overview
This device has a DC current gain of 345 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 515mV @ 600mA, 6A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 140MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 3A volts is possible.
PBSS303ND,115 Features
the DC current gain for this device is 345 @ 500mA 2V
the vce saturation(Max) is 515mV @ 600mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz
PBSS303ND,115 Applications
There are a lot of Nexperia USA Inc.
PBSS303ND,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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