PBSS303ND,115
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- Mfr.Part #
- PBSS303ND,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A 6TSOP
- Stock
- 1,814
- In Stock ：
- 1,814
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 2.5W
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Frequency :
- 140MHz
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 515mV @ 600mA, 6A
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 60V
- Radiation Hardening :
- No
- Number of Pins :
- 6
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 140MHz
- Base Part Number :
- PBSS303N
- Published :
- 2007
- Transistor Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 345 @ 500mA 2V
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 3A
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 1A
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA
- Transition Frequency :
- 140MHz
- Mount :
- Surface Mount
- Max Power Dissipation :
- 2.5W
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Power - Max :
- 1.1W
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Pin Count :
- 6
- Package / Case :
- SC-74, SOT-457
- Datasheets
- PBSS303ND,115
PBSS303ND,115 Documents
NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS303ND,115 Overview
This device has a DC current gain of 345 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 515mV @ 600mA, 6A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 140MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 3A volts is possible.
PBSS303ND,115 Features
the DC current gain for this device is 345 @ 500mA 2V
the vce saturation(Max) is 515mV @ 600mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz
PBSS303ND,115 Applications
There are a lot of Nexperia USA Inc.
PBSS303ND,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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