PBSS302PX,115
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- Mfr.Part #
- PBSS302PX,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 5.1A SOT89
- Stock
- 9,481
- In Stock ：
- 9,481
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 4 Weeks
- Published :
- 2009
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- hFE Min :
- 250
- Vce Saturation (Max) @ Ib, Ic :
- 230mV @ 255mA, 5.1A
- Turn On Time-Max (ton) :
- 65ns
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 12.7mm
- Termination :
- SMD/SMT
- Pin Count :
- 3
- Height :
- 6.35mm
- Max Collector Current :
- 5.1A
- Power Dissipation :
- 600mW
- Power - Max :
- 2.1W
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 20V
- Operating Temperature :
- 150°C TJ
- Weight :
- 4.535924g
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2A 2V
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-243AA
- Collector Emitter Voltage (VCEO) :
- 20V
- Base Part Number :
- PBSS302P
- Max Breakdown Voltage :
- 20V
- Terminal Form :
- Flat
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 2.1W
- Transition Frequency :
- 130MHz
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 130MHz
- Width :
- 6.35mm
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Frequency :
- 130MHz
- Datasheets
- PBSS302PX,115
SOT89.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS302PX,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 130MHz in the part.Single BJT transistor can be broken down at a voltage of 20V volts.When collector current reaches its maximum, it can reach 5.1A volts.
PBSS302PX,115 Features
the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 230mV @ 255mA, 5.1A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
PBSS302PX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS302PX,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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