PBSS302PD,115
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- Mfr.Part #
- PBSS302PD,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS PNP 40V 4A 6TSOP
- Stock
- 7,453
- In Stock ：
- 7,453
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Power - Max :
- 1.1W
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Form :
- Gull wing
- Frequency :
- 110MHz
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- Published :
- 2007
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Package / Case :
- SC-74, SOT-457
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 175 @ 2A 2V
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Collector Current :
- 4A
- Max Power Dissipation :
- 1.1W
- Number of Pins :
- 6
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Emitter Base Voltage (VEBO) :
- -5V
- Base Part Number :
- PBSS302P
- Number of Terminations :
- 6
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 110MHz
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 40V
- Max Breakdown Voltage :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 2.5W
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 600mA, 6A
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 40V
- Transition Frequency :
- 110MHz
- Pin Count :
- 6
- hFE Min :
- 30
- Datasheets
- PBSS302PD,115
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS302PD,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 175 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 450mV @ 600mA, 6A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 110MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 4A volts.
PBSS302PD,115 Features
the DC current gain for this device is 175 @ 2A 2V
the vce saturation(Max) is 450mV @ 600mA, 6A
the emitter base voltage is kept at -5V
a transition frequency of 110MHz
PBSS302PD,115 Applications
There are a lot of Nexperia USA Inc.
PBSS302PD,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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