NZT6717
- Mfr.Part #
- NZT6717
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1.2A SOT223-4
- Stock
- 22,027
- In Stock :
- 22,027
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 10mA, 250mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Power Dissipation :
- 1W
- Package / Case :
- TO-261-4, TO-261AA
- Number of Terminations :
- 4
- Current Rating :
- 1.2A
- Terminal Form :
- Gull wing
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 250mA 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 80V
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 350mV
- Max Collector Current :
- 1.2A
- Max Breakdown Voltage :
- 80V
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 80V
- hFE Min :
- 50
- Published :
- 2014
- Factory Lead Time :
- 6 Weeks
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Base Part Number :
- NZT6717
- Number of Pins :
- 4
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 1W
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Weight :
- 188mg
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Datasheets
- NZT6717

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NZT6717 Overview
This device has a DC current gain of 50 @ 250mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 350mV.A VCE saturation (Max) of 350mV @ 10mA, 250mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1.2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 80V volts can be used.A maximum collector current of 1.2A volts is possible.
NZT6717 Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 10mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.2A
NZT6717 Applications
There are a lot of ON Semiconductor
NZT6717 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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