NZT660A

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-55°C~150°C TJ

Transition Frequency :

75MHz

REACH SVHC :

No SVHC

Frequency :

75MHz

Mounting Type :

Surface Mount

Package / Case :

TO-261-4, TO-261AA

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 500mA 2V

Current - Collector Cutoff (Max) :

100nA ICBO

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Factory Lead Time :

24 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Current Rating :

-3A

Base Part Number :

NZT660

Collector Emitter Voltage (VCEO) :

60V

Transistor Type :

PNP

Power Dissipation :

2W

RoHS Status :

ROHS3 Compliant

Max Collector Current :

3A

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Emitter Base Voltage (VEBO) :

-5V

Max Breakdown Voltage :

60V

Transistor Element Material :

SILICON

Terminal Position :

Dual

Terminal Form :

Gull wing

Max Power Dissipation :

2W

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Voltage - Rated DC :

-60V

ECCN Code :

EAR99

Gain Bandwidth Product :

75MHz

Vce Saturation (Max) @ Ib, Ic :

500mV @ 300mA, 3A

Collector Emitter Saturation Voltage :

500mV

Collector Base Voltage (VCBO) :

-60V

Number of Pins :

4

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

60V

Number of Terminations :

4

Polarity/Channel Type :

PNP

Case Connection :

COLLECTOR

Number of Elements :

1

hFE Min :

250

Weight :

188mg

JESD-609 Code :

e3

Radiation Hardening :

No