NZT660A

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current Rating :

-3A

Mounting Type :

Surface Mount

Lead Free :

Lead Free

ECCN Code :

EAR99

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

60V

Weight :

188mg

Max Collector Current :

3A

Collector Emitter Saturation Voltage :

500mV

Case Connection :

COLLECTOR

Voltage - Rated DC :

-60V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

60V

Polarity/Channel Type :

PNP

hFE Min :

250

Emitter Base Voltage (VEBO) :

-5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 500mA 2V

Max Power Dissipation :

2W

Power Dissipation :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

75MHz

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Vce Saturation (Max) @ Ib, Ic :

500mV @ 300mA, 3A

Mount :

Surface Mount

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-261-4, TO-261AA

Number of Elements :

1

Gain Bandwidth Product :

75MHz

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Transistor Type :

PNP

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Terminations :

4

Base Part Number :

NZT660

Collector Base Voltage (VCBO) :

-60V

Pbfree Code :

yes

Number of Pins :

4

Max Breakdown Voltage :

60V

Factory Lead Time :

24 Weeks

Transition Frequency :

75MHz

Terminal Finish :

Tin (Sn)