NZT6715
- Mfr.Part #
- NZT6715
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 40V 1.5A SOT223-4
- Stock
- 4,016
- In Stock :
- 4,016
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 500mV
- Current Rating :
- 1.5A
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 50
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 1W
- Pbfree Code :
- yes
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Max Breakdown Voltage :
- 40V
- Factory Lead Time :
- 6 Weeks
- Max Collector Current :
- 1.5A
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Emitter Voltage (VCEO) :
- 40V
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- NZT6715
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 1A 1V
- Collector Base Voltage (VCBO) :
- 50V
- Element Configuration :
- Single
- Voltage - Rated DC :
- 40V
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Weight :
- 188mg
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Datasheets
- NZT6715

NPN -55°C~150°C TJ 100μA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NZT6715 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 1A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
NZT6715 Features
the DC current gain for this device is 50 @ 1A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
NZT6715 Applications
There are a lot of ON Semiconductor
NZT6715 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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