NZT6715
- Mfr.Part #
- NZT6715
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 40V 1.5A SOT223-4
- Stock
- 4,016
- In Stock :
- 4,016
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Base Part Number :
- NZT6715
- Max Power Dissipation :
- 1W
- Number of Pins :
- 4
- Weight :
- 188mg
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- Power Dissipation :
- 1W
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 40V
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 500mV
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Package / Case :
- TO-261-4, TO-261AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 1A 1V
- Voltage - Rated DC :
- 40V
- Case Connection :
- COLLECTOR
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 6 Weeks
- Max Collector Current :
- 1.5A
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 50
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Current Rating :
- 1.5A
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 40V
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Datasheets
- NZT6715

NPN -55°C~150°C TJ 100μA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NZT6715 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 1A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
NZT6715 Features
the DC current gain for this device is 50 @ 1A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
NZT6715 Applications
There are a lot of ON Semiconductor
NZT6715 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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