NZT6715
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- Mfr.Part #
- NZT6715
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 40V 1.5A SOT223-4
- Stock
- 4,016
- In Stock ：
- 4,016
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Factory Lead Time :
- 6 Weeks
- Case Connection :
- COLLECTOR
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- 500mV
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 40V
- Max Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 1A 1V
- Mount :
- Surface Mount
- Current Rating :
- 1.5A
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 50V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1.5A
- Number of Pins :
- 4
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- hFE Min :
- 50
- Max Breakdown Voltage :
- 40V
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- NZT6715
- Package / Case :
- TO-261-4, TO-261AA
- Number of Terminations :
- 4
- Collector Emitter Breakdown Voltage :
- 40V
- Weight :
- 188mg
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- Dual
- Power Dissipation :
- 1W
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Datasheets
- NZT6715
NPN -55°C~150°C TJ 100μA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NZT6715 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 1A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
NZT6715 Features
the DC current gain for this device is 50 @ 1A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
NZT6715 Applications
There are a lot of ON Semiconductor
NZT6715 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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