NZT6717
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- Mfr.Part #
- NZT6717
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1.2A SOT223-4
- Stock
- 28,851
- In Stock ：
- 28,851
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 1W
- Voltage - Rated DC :
- 80V
- Package / Case :
- TO-261-4, TO-261AA
- Base Part Number :
- NZT6717
- Collector Emitter Saturation Voltage :
- 350mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 250mA 1V
- Radiation Hardening :
- No
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Published :
- 2014
- Collector Base Voltage (VCBO) :
- 80V
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Current Rating :
- 1.2A
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 1.2A
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 1W
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Factory Lead Time :
- 6 Weeks
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Weight :
- 188mg
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 50
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 80V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 10mA, 250mA
- Number of Pins :
- 4
- Datasheets
- NZT6717
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NZT6717 Overview
This device has a DC current gain of 50 @ 250mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 350mV.A VCE saturation (Max) of 350mV @ 10mA, 250mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1.2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 80V volts can be used.A maximum collector current of 1.2A volts is possible.
NZT6717 Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 10mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.2A
NZT6717 Applications
There are a lot of ON Semiconductor
NZT6717 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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