NZT6717
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- Mfr.Part #
- NZT6717
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1.2A SOT223-4
- Stock
- 28,851
- In Stock ：
- 28,851
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- NZT6717
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- Dual
- Weight :
- 188mg
- Number of Pins :
- 4
- Max Collector Current :
- 1.2A
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 1.2A
- Collector Emitter Breakdown Voltage :
- 80V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 80V
- Published :
- 2014
- Factory Lead Time :
- 6 Weeks
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 10mA, 250mA
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Max Power Dissipation :
- 1W
- Collector Emitter Saturation Voltage :
- 350mV
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 4
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 80V
- hFE Min :
- 50
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-261-4, TO-261AA
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 250mA 1V
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 80V
- Mounting Type :
- Surface Mount
- Datasheets
- NZT6717
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NZT6717 Overview
This device has a DC current gain of 50 @ 250mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 350mV.A VCE saturation (Max) of 350mV @ 10mA, 250mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1.2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 80V volts can be used.A maximum collector current of 1.2A volts is possible.
NZT6717 Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 10mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.2A
NZT6717 Applications
There are a lot of ON Semiconductor
NZT6717 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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