NZT6717
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- Mfr.Part #
- NZT6717
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1.2A SOT223-4
- Stock
- 28,851
- In Stock ：
- 28,851
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 350mV
- Max Collector Current :
- 1.2A
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 80V
- Published :
- 2014
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-261-4, TO-261AA
- Weight :
- 188mg
- Voltage - Rated DC :
- 80V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 50
- Current Rating :
- 1.2A
- Collector Emitter Breakdown Voltage :
- 80V
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 80V
- JESD-609 Code :
- e3
- Number of Terminations :
- 4
- Base Part Number :
- NZT6717
- Power Dissipation :
- 1W
- Collector Base Voltage (VCBO) :
- 80V
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 1W
- Factory Lead Time :
- 6 Weeks
- Number of Pins :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 250mA 1V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 10mA, 250mA
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Datasheets
- NZT6717
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NZT6717 Overview
This device has a DC current gain of 50 @ 250mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 350mV.A VCE saturation (Max) of 350mV @ 10mA, 250mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1.2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 80V volts can be used.A maximum collector current of 1.2A volts is possible.
NZT6717 Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 10mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.2A
NZT6717 Applications
There are a lot of ON Semiconductor
NZT6717 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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