NZT651
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- Mfr.Part #
- NZT651
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 4A SOT223-4
- Stock
- 1,504
- In Stock ：
- 1,504
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 75MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Current Rating :
- 4A
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Factory Lead Time :
- 45 Weeks
- Max Collector Current :
- 4A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 2A 2V
- JESD-609 Code :
- e3
- Power Dissipation :
- 1.2W
- RoHS Status :
- ROHS3 Compliant
- Height :
- 6.35mm
- hFE Min :
- 75
- Max Power Dissipation :
- 1.2W
- Length :
- 6.35mm
- Voltage - Rated DC :
- 60V
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Case Connection :
- COLLECTOR
- Width :
- 6.35mm
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Number of Terminations :
- 4
- Collector Base Voltage (VCBO) :
- 80V
- Package / Case :
- TO-261-4, TO-261AA
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Transition Frequency :
- 75MHz
- Mounting Type :
- Surface Mount
- Number of Pins :
- 4
- Collector Emitter Saturation Voltage :
- 500mV
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Frequency :
- 75MHz
- Weight :
- 188mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- NZT651
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- Datasheets
- NZT651
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NZT651 Overview
This device has a DC current gain of 40 @ 2A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 4A volts is possible.
NZT651 Features
the DC current gain for this device is 40 @ 2A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 75MHz
NZT651 Applications
There are a lot of ON Semiconductor
NZT651 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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