NZT651
- Mfr.Part #
- NZT651
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 4A SOT223-4
- Stock
- 1,504
- In Stock :
- 1,504
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 75MHz
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Saturation Voltage :
- 500mV
- Max Breakdown Voltage :
- 60V
- Terminal Position :
- Dual
- Width :
- 6.35mm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 2A 2V
- Length :
- 6.35mm
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Base Part Number :
- NZT651
- Factory Lead Time :
- 45 Weeks
- hFE Min :
- 75
- Max Power Dissipation :
- 1.2W
- Power Dissipation :
- 1.2W
- Collector Base Voltage (VCBO) :
- 80V
- Number of Terminations :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 60V
- Weight :
- 188mg
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 75MHz
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 75MHz
- Max Collector Current :
- 4A
- Height :
- 6.35mm
- Number of Pins :
- 4
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- 60V
- Package / Case :
- TO-261-4, TO-261AA
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Current Rating :
- 4A
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- NZT651

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NZT651 Overview
This device has a DC current gain of 40 @ 2A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 4A volts is possible.
NZT651 Features
the DC current gain for this device is 40 @ 2A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 75MHz
NZT651 Applications
There are a lot of ON Semiconductor
NZT651 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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