NZT651
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- Mfr.Part #
- NZT651
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 4A SOT223-4
- Stock
- 1,504
- In Stock ：
- 1,504
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 4
- Frequency :
- 75MHz
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 60V
- Lead Free :
- Lead Free
- Current Rating :
- 4A
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 2A 2V
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 500mV
- Power Dissipation :
- 1.2W
- Voltage - Rated DC :
- 60V
- Max Collector Current :
- 4A
- Transistor Element Material :
- SILICON
- hFE Min :
- 75
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Length :
- 6.35mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Number of Pins :
- 4
- Weight :
- 188mg
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Height :
- 6.35mm
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 75MHz
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 60V
- Max Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Factory Lead Time :
- 45 Weeks
- Width :
- 6.35mm
- Base Part Number :
- NZT651
- Collector Base Voltage (VCBO) :
- 80V
- Package / Case :
- TO-261-4, TO-261AA
- Transition Frequency :
- 75MHz
- Max Power Dissipation :
- 1.2W
- Datasheets
- NZT651
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NZT651 Overview
This device has a DC current gain of 40 @ 2A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 4A volts is possible.
NZT651 Features
the DC current gain for this device is 40 @ 2A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 75MHz
NZT651 Applications
There are a lot of ON Semiconductor
NZT651 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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