NZT651
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- Mfr.Part #
- NZT651
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 4A SOT223-4
- Stock
- 1,504
- In Stock ：
- 1,504
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 75
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 60V
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 2A 2V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Current Rating :
- 4A
- Max Breakdown Voltage :
- 60V
- Power Dissipation :
- 1.2W
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Number of Terminations :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Gain Bandwidth Product :
- 75MHz
- Length :
- 6.35mm
- Factory Lead Time :
- 45 Weeks
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Max Collector Current :
- 4A
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 500mV
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-261-4, TO-261AA
- Transition Frequency :
- 75MHz
- Collector Base Voltage (VCBO) :
- 80V
- Base Part Number :
- NZT651
- JESD-609 Code :
- e3
- Number of Pins :
- 4
- Polarity/Channel Type :
- NPN
- Width :
- 6.35mm
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Weight :
- 188mg
- Element Configuration :
- Single
- Frequency :
- 75MHz
- Height :
- 6.35mm
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 1.2W
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Datasheets
- NZT651
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NZT651 Overview
This device has a DC current gain of 40 @ 2A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 4A volts is possible.
NZT651 Features
the DC current gain for this device is 40 @ 2A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 75MHz
NZT651 Applications
There are a lot of ON Semiconductor
NZT651 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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