NZT651
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- Mfr.Part #
- NZT651
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 4A SOT223-4
- Stock
- 1,504
- In Stock ：
- 1,504
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Weight :
- 188mg
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Width :
- 6.35mm
- Base Part Number :
- NZT651
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Frequency :
- 75MHz
- Number of Terminations :
- 4
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-261-4, TO-261AA
- Collector Emitter Saturation Voltage :
- 500mV
- Max Collector Current :
- 4A
- Collector Base Voltage (VCBO) :
- 80V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Max Power Dissipation :
- 1.2W
- Number of Elements :
- 1
- Height :
- 6.35mm
- Factory Lead Time :
- 45 Weeks
- Mount :
- Surface Mount
- Current Rating :
- 4A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 2A 2V
- Power Dissipation :
- 1.2W
- Gain Bandwidth Product :
- 75MHz
- Number of Pins :
- 4
- Collector Emitter Voltage (VCEO) :
- 60V
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Case Connection :
- COLLECTOR
- Max Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 6.35mm
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Transition Frequency :
- 75MHz
- hFE Min :
- 75
- Datasheets
- NZT651
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NZT651 Overview
This device has a DC current gain of 40 @ 2A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 4A volts is possible.
NZT651 Features
the DC current gain for this device is 40 @ 2A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 75MHz
NZT651 Applications
There are a lot of ON Semiconductor
NZT651 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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