NZT605

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

150°C

Number of Terminations :

4

Voltage - Rated DC :

11V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

10nA ICBO

Element Configuration :

Single

JESD-30 Code :

R-PDSO-G4

Max Power Dissipation :

1W

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Width :

3.56mm

Transistor Element Material :

SILICON

Transistor Type :

NPN - Darlington

Emitter Base Voltage (VEBO) :

10V

Factory Lead Time :

22 Weeks

Case Connection :

COLLECTOR

Length :

6.5mm

Height :

1.8mm

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

110V

Polarity :

NPN

Frequency - Transition :

150MHz

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Package / Case :

TO-261-4, TO-261AA

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 1mA, 1A

Max Collector Current :

1.5A

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

140V

Max Breakdown Voltage :

110V

Collector Emitter Saturation Voltage :

1.5V

Weight :

188mg

Published :

1997

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 1A 5V

Collector Emitter Voltage (VCEO) :

110V

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Power Dissipation :

1W

JESD-609 Code :

e3

Current Rating :

1.5A

Lead Free :

Lead Free

Transition Frequency :

150MHz

Base Part Number :

NZT605

hFE Min :

200

Packaging :

Tape and Reel (TR)