NZT605

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

1W

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

10nA ICBO

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 1mA, 1A

Number of Elements :

1

Voltage - Rated DC :

11V

JESD-30 Code :

R-PDSO-G4

Frequency - Transition :

150MHz

Max Collector Current :

1.5A

Polarity :

NPN

Emitter Base Voltage (VEBO) :

10V

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 1A 5V

Packaging :

Tape and Reel (TR)

Transition Frequency :

150MHz

Height :

1.8mm

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Collector Emitter Voltage (VCEO) :

110V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Max Breakdown Voltage :

110V

Lead Free :

Lead Free

Mount :

Surface Mount

Current Rating :

1.5A

Radiation Hardening :

No

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

1.5V

Mounting Type :

Surface Mount

Power Dissipation :

1W

Factory Lead Time :

22 Weeks

Length :

6.5mm

Collector Emitter Breakdown Voltage :

110V

Weight :

188mg

Transistor Type :

NPN - Darlington

Published :

1997

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

3.56mm

Terminal Position :

Dual

Max Junction Temperature (Tj) :

150°C

Case Connection :

COLLECTOR

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

140V

Base Part Number :

NZT605

Operating Temperature :

-55°C~150°C TJ

hFE Min :

200

Terminal Form :

Gull wing

Package / Case :

TO-261-4, TO-261AA

Number of Terminations :

4

Element Configuration :

Single