NZT660

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Width :

3.7mm

Power Dissipation :

2W

Number of Elements :

1

Lead Free :

Lead Free

Element Configuration :

Single

Collector Emitter Saturation Voltage :

550mV

Number of Pins :

4

Number of Terminations :

4

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

60V

Max Collector Current :

3A

Length :

6.7mm

Case Connection :

COLLECTOR

Published :

2017

ECCN Code :

EAR99

Height :

1.7mm

Radiation Hardening :

No

Max Breakdown Voltage :

60V

Voltage - Rated DC :

-60V

REACH SVHC :

No SVHC

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

-80V

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

2W

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Current - Collector Cutoff (Max) :

100nA ICBO

Current Rating :

-3A

Base Part Number :

NZT660

hFE Min :

100

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

-5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

550mV @ 300mA, 3A

Frequency :

75MHz

Transition Frequency :

75MHz

Package / Case :

TO-261-4, TO-261AA

Terminal Form :

Gull wing

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 2V

Gain Bandwidth Product :

75MHz

Transistor Type :

PNP

Packaging :

Tape and Reel (TR)

Weight :

188mg

Factory Lead Time :

17 Weeks

Collector Emitter Breakdown Voltage :

60V

Polarity/Channel Type :

PNP