NZT660
- Mfr.Part #
- NZT660
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 3A SOT223-4
- Stock
- 37,601
- In Stock :
- 37,601
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Length :
- 6.7mm
- Transition Frequency :
- 75MHz
- Terminal Form :
- Gull wing
- Number of Pins :
- 4
- Max Power Dissipation :
- 2W
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Frequency :
- 75MHz
- Power Dissipation :
- 2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2017
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- NZT660
- hFE Min :
- 100
- Factory Lead Time :
- 17 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- -5V
- Gain Bandwidth Product :
- 75MHz
- Height :
- 1.7mm
- Transistor Type :
- PNP
- Max Collector Current :
- 3A
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 300mA, 3A
- Package / Case :
- TO-261-4, TO-261AA
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 4
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 550mV
- Voltage - Rated DC :
- -60V
- Collector Emitter Breakdown Voltage :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Base Voltage (VCBO) :
- -80V
- Current Rating :
- -3A
- Weight :
- 188mg
- Mount :
- Surface Mount
- Width :
- 3.7mm
- Max Breakdown Voltage :
- 60V
- Datasheets
- NZT660

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NZT660 Overview
DC current gain in this device equals 100 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 550mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 550mV @ 300mA, 3A.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -3A current rating.As a result, the part has a transition frequency of 75MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 3A volts.
NZT660 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 550mV
the vce saturation(Max) is 550mV @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 75MHz
NZT660 Applications
There are a lot of ON Semiconductor
NZT660 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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