NZT660

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

60V

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

100nA ICBO

Length :

6.7mm

Transition Frequency :

75MHz

Terminal Form :

Gull wing

Number of Pins :

4

Max Power Dissipation :

2W

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Frequency :

75MHz

Power Dissipation :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2017

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Base Part Number :

NZT660

hFE Min :

100

Factory Lead Time :

17 Weeks

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Case Connection :

COLLECTOR

Emitter Base Voltage (VEBO) :

-5V

Gain Bandwidth Product :

75MHz

Height :

1.7mm

Transistor Type :

PNP

Max Collector Current :

3A

Vce Saturation (Max) @ Ib, Ic :

550mV @ 300mA, 3A

Package / Case :

TO-261-4, TO-261AA

ECCN Code :

EAR99

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 2V

Polarity/Channel Type :

PNP

Number of Terminations :

4

JESD-609 Code :

e3

Element Configuration :

Single

Terminal Position :

Dual

REACH SVHC :

No SVHC

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

550mV

Voltage - Rated DC :

-60V

Collector Emitter Breakdown Voltage :

60V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Collector Base Voltage (VCBO) :

-80V

Current Rating :

-3A

Weight :

188mg

Mount :

Surface Mount

Width :

3.7mm

Max Breakdown Voltage :

60V