NZT660

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Rated DC :

-60V

REACH SVHC :

No SVHC

Gain Bandwidth Product :

75MHz

Collector Emitter Voltage (VCEO) :

60V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Weight :

188mg

ECCN Code :

EAR99

Package / Case :

TO-261-4, TO-261AA

Pbfree Code :

yes

Max Breakdown Voltage :

60V

Collector Base Voltage (VCBO) :

-80V

Height :

1.7mm

Lead Free :

Lead Free

Current Rating :

-3A

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 2V

Published :

2017

Frequency :

75MHz

Max Power Dissipation :

2W

Number of Terminations :

4

Transition Frequency :

75MHz

Case Connection :

COLLECTOR

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

-5V

Width :

3.7mm

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

100nA ICBO

Length :

6.7mm

hFE Min :

100

Number of Pins :

4

Base Part Number :

NZT660

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Max Collector Current :

3A

Terminal Form :

Gull wing

Terminal Position :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Element Configuration :

Single

Polarity/Channel Type :

PNP

Mount :

Surface Mount

Factory Lead Time :

17 Weeks

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

550mV

Collector Emitter Breakdown Voltage :

60V

Power Dissipation :

2W

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

550mV @ 300mA, 3A

Operating Temperature :

-55°C~150°C TJ