NTLJS4159NT1G
- Mfr.Part #
- NTLJS4159NT1G
- Manufacturer
- onsemi
- Package / Case
- 6-WDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 3.6A 6WDFN
- Stock
- 26,811
- In Stock :
- 26,811
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 700mW Ta
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- DS Breakdown Voltage-Min :
- 30V
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- S-XDSO-C6
- Number of Terminations :
- 6
- Drain-source On Resistance-Max :
- 0.045Ohm
- Drain Current-Max (Abs) (ID) :
- 3.6A
- Terminal Finish :
- MATTE TIN
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- 6-WDFN Exposed Pad
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Terminal Form :
- C BEND
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Qualification Status :
- COMMERCIAL
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A Ta
- Pulsed Drain Current-Max (IDM) :
- 28A
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.045pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Drain to Source Voltage (Vdss) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vgs (Max) :
- ±8V
- Terminal Position :
- Dual
- Surface Mount :
- yes
- Pin Count :
- 6
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 2A, 4.5V
- Number of Elements :
- 1
- Datasheets
- NTLJS4159NT1G

N-Channel Tape & Reel (TR) 35m Ω @ 2A, 4.5V ±8V 1.045pF @ 15V 13nC @ 4.5V 30V 6-WDFN Exposed Pad
NTLJS4159NT1G Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1.045pF @ 15V.A device's drain current is its maximum continuous current, and this device's drain current is 3.6A.A maximum pulsed drain current of 28A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).
NTLJS4159NT1G Features
based on its rated peak drain current 28A.
a 30V drain to source voltage (Vdss)
NTLJS4159NT1G Applications
There are a lot of Rochester Electronics, LLC
NTLJS4159NT1G applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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