NTLJS4159NT1G

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Mfr.Part #
NTLJS4159NT1G
Manufacturer
onsemi
Package / Case
6-WDFN Exposed Pad
Datasheet
Download
Description
MOSFET N-CH 30V 3.6A 6WDFN
Stock
26,811
In Stock :
26,811

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
700mW Ta
Additional Feature :
LOGIC LEVEL COMPATIBLE
DS Breakdown Voltage-Min :
30V
Packaging :
Tape and Reel (TR)
JESD-30 Code :
S-XDSO-C6
Number of Terminations :
6
Drain-source On Resistance-Max :
0.045Ohm
Drain Current-Max (Abs) (ID) :
3.6A
Terminal Finish :
MATTE TIN
Peak Reflow Temperature (Cel) :
260
Package / Case :
6-WDFN Exposed Pad
Configuration :
SINGLE WITH BUILT-IN DIODE
Case Connection :
DRAIN
Operating Temperature :
-55°C~150°C TJ
Transistor Application :
SWITCHING
Terminal Form :
C BEND
Pbfree Code :
yes
Mounting Type :
Surface Mount
Transistor Element Material :
SILICON
Qualification Status :
COMMERCIAL
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
3.6A Ta
Pulsed Drain Current-Max (IDM) :
28A
Vgs(th) (Max) @ Id :
1V @ 250μA
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1.045pF @ 15V
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Drain to Source Voltage (Vdss) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
40
Vgs (Max) :
±8V
Terminal Position :
Dual
Surface Mount :
yes
Pin Count :
6
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
35m Ω @ 2A, 4.5V
Number of Elements :
1
Datasheets
NTLJS4159NT1G
Introducing Transistors - FETs, MOSFETs - Single onsemi NTLJS4159NT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Package / Case:6-WDFN Exposed Pad, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, NTLJS4159NT1G pinout, NTLJS4159NT1G datasheet PDF, NTLJS4159NT1G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTLJS4159NT1G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTLJS4159NT1G


N-Channel Tape & Reel (TR) 35m Ω @ 2A, 4.5V ±8V 1.045pF @ 15V 13nC @ 4.5V 30V 6-WDFN Exposed Pad

NTLJS4159NT1G Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1.045pF @ 15V.A device's drain current is its maximum continuous current, and this device's drain current is 3.6A.A maximum pulsed drain current of 28A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).

NTLJS4159NT1G Features


based on its rated peak drain current 28A.
a 30V drain to source voltage (Vdss)


NTLJS4159NT1G Applications


There are a lot of Rochester Electronics, LLC
NTLJS4159NT1G applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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