NTLJS4114NT1G
- Mfr.Part #
- NTLJS4114NT1G
- Manufacturer
- onsemi
- Package / Case
- 6-WDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 3.6A 6WDFN
- Stock
- 5,102
- In Stock :
- 5,102
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Nominal Vgs :
- 550 mV
- Input Capacitance (Ciss) (Max) @ Vds :
- 650pF @ 15V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Halogen Free :
- Halogen Free
- Width :
- 2mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 2mm
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 30V
- Pulsed Drain Current-Max (IDM) :
- 28A
- Terminal Form :
- C BEND
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Published :
- 2005
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Height :
- 750μm
- Pbfree Code :
- yes
- Power Dissipation :
- 700mW
- Element Configuration :
- Single
- Package / Case :
- 6-WDFN Exposed Pad
- Vgs (Max) :
- ±12V
- Threshold Voltage :
- 550mV
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Rise Time :
- 9ns
- Peak Reflow Temperature (Cel) :
- 260
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 4.5V
- Continuous Drain Current (ID) :
- 7.8A
- Number of Pins :
- 6
- REACH SVHC :
- No SVHC
- Pin Count :
- 6
- Turn On Delay Time :
- 5 ns
- Power Dissipation-Max :
- 700mW Ta
- Gate to Source Voltage (Vgs) :
- 12V
- Turn-Off Delay Time :
- 20 ns
- Fall Time (Typ) :
- 9 ns
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A Ta
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 2A, 4.5V
- Surface Mount :
- yes
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 6
- Series :
- µCool™
- Factory Lead Time :
- 9 Weeks
- Terminal Position :
- Dual
- Resistance :
- 35mOhm
- Datasheets
- NTLJS4114NT1G

N-Channel Tape & Reel (TR) 35m Ω @ 2A, 4.5V ±12V 650pF @ 15V 13nC @ 4.5V 6-WDFN Exposed Pad
NTLJS4114NT1G Description
NTLJS4114NT1G is a type of N-channel power MOSFET provided by ON Semiconductor. It is available in the WDFN6 package that provides an exposed drain pad for excellent thermal conduction. It delivers a 1.8 V rating for operation at low voltage logic level gate drive. Based on its specific characteristics, it is well suited for DC-DC conversion, boost circuits for LED backlights, battery and load management, and low-side load switch for noisy environments.
NTLJS4114NT1G Features
-
Available in the WDFN6 package
-
Excellent thermal conduction
-
1.8 V RDS (on) rating
-
Low profile
NTLJS4114NT1G Applications
-
DC-DC conversion
-
Boost circuits for LED backlights
-
Battery and load management
-
Low-side load switch for noisy environment
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